Datasheet

315
8272E–AVR–04/2013
ATmega164A/PA/324A/PA/644A/PA/1284/P
27.9 Serial Programming Instruction set
Table 27-17 and Figure 27-11 on page 316 describes the Instruction set.
Table 27-16. Minimum wait delay before writing the next flash or EEPROM location.
Symbol Minimum wait delay
t
WD_FLASH
4.5ms
t
WD_EEPROM
3.6ms
t
WD_ERASE
9.0ms
Table 27-17. Serial programming instruction set (hexadecimal values).
Instruction/operation
Instruction format
Byte 1 Byte 2 Byte 3 Byte 4
Programming Enable $AC $53 $00 $00
Chip Erase (Program Memory/EEPROM) $AC $80 $00 $00
Poll RDY/BSY
$F0 $00 $00 data byte out
Load Instructions
Load Extended Address byte
(1)
$4D $00 Extended adr $00
Load Program Memory Page, High byte $48 $00 adr LSB high data byte in
Load Program Memory Page, Low byte $40 $00 adr LSB low data byte in
Load EEPROM Memory Page (page access) $C1 $00 0000 000aa
(2)
data byte in
Read Instructions
(5)
Read Program Memory, High byte $28 adr MSB adr LSB high data byte out
Read Program Memory, Low byte $20 adr MSB adr LSB low data byte out
Read EEPROM Memory $A0 0000 00aa
(2)
aaaa aaaa
(2)
data byte out
Read Lock bits
(3)
$58 $00 $00 data byte out
Read Signature Byte $30 $00 0000 000aa
(2)
data byte out
Read Fuse bits
(3)
$50 $00 $00 data byte out
Read Fuse High bits
(3)
$58 $08 $00 data byte out
Read Extended Fuse Bits
(3)
$50 $08 $00 data byte out
Read Calibration Byte $38 $00 $00 data byte out
Write Instructions
(5)
Write Program Memory Page
(6)
$4C adr MSB adr LSB $00
Write EEPROM Memory $C0 0000 00aa
(2)
aaaa aaaa
(2)
data byte in
Write EEPROM Memory Page (page access) $C2 0000 00aa
(2)
aaaa aa00
(2)
$00
Write Lock bits
(3)(4)
$AC $E0 $00 data byte in
Write Fuse bits
(3)(4)
$AC $A0 $00 data byte in
Write Fuse High bits
(3)(4)
$AC $A8 $00 data byte in
Write Extended Fuse Bits
(3)(4)
$AC $A4 $00 data byte in