Datasheet

157
8024A–AVR–04/08
ATmega8HVA/16HVA
27.8 High-voltage Serial Programming Algorithm
To program and verify the ATmega8HVA/16HVA in the High-voltage Serial Programming mode,
the following sequence is recommended (See instruction formats in Table 27-14):
27.8.1 Enter High-voltage Serial Programming Mode
The following algorithm puts the device in Serial (High-voltage) Programming mode:
1. Set Prog_enable pins listed in Table 27-12 on page 156 to “0000”, RESET pin to 0V and
V
CC
to 0V.
2. Apply 3.0 - 3.5V between V
CC
and GND. Ensure that V
CC
reaches at least 1.8V within the
next 20 µs.
3. Wait 20 - 60 µs, and apply V
HRST
- 12.5V to RESET.
4. Keep the Prog_enable pins unchanged for at least t
HVRST
after the High-voltage has been
applied to ensure the Prog_enable Signature has been latched.
5. Release Prog_enable[1] pin to avoid drive contention on the Prog_enable[1]/SDO pin.
6. Wait at least 300 µs before giving any serial instructions on SDI/SII.
If the rise time of the V
CC
is unable to fulfill the requirements listed above, the following alterna-
tive algorithm can be used.
1. Set Prog_enable pins listed in Table 27-12 on page 156 to “0000”, RESET pin to 0V and
V
CC
to 0V.
2. Apply 3.0 - 3.5V between V
CC
and GND.
3. Monitor V
CC
, and as soon as V
CC
reaches 0.9 - 1.1V, apply V
HRST
- 12.5V to RESET.
4. Keep the Prog_enable pins unchanged for at least t
HVRST
after the High-voltage has been
applied to ensure the Prog_enable Signature has been latched.
5. Release Prog_enable[1] pin to avoid drive contention on the Prog_enable[1]/SDO pin.
6. Wait until V
CC
actually reaches 3.0 - 3.5V before giving any serial instructions on SDI/SII.
27.8.2 Considerations for Efficient Programming
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The command needs only be loaded once when writing or reading multiple memory locations.
Skip writing the data value 0xFF that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase.
Address High byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
Table 27-13. High-voltage Reset Characteristics
Supply Voltage RESET Pin High-voltage Threshold
Minimum High-voltage Period for
Latching Prog_enable
V
CC
V
HVRST
t
HVRST
3.0V 11.5V 10 µs
3.5V 11.5V 10 µs