Datasheet

algorithm for the EEPROM data memory is as follows (for details on Command, Address, and Data
loading, refer to 32.8.4 Programming the Flash):
1. Step A: Load Command “0001 0001”.
2. Step G: Load Address High Byte (0x00 - 0xFF).
3. Step B: Load Address Low Byte (0x00 - 0xFF).
4. Step C: Load Data (0x00 - 0xFF).
5. Step E: Latch data (give PAGEL a positive pulse).
6. Step K: Repeat 3 through 5 until the entire buffer is filled.
7. Step L: Program EEPROM page.
7.1. Set BS1 to “0”.
7.2. Give WR a negative pulse. This starts programming of the EEPROM page. RDY/BSY goes
low.
7.3. Wait until to RDY/BSY goes high before programming the next page (refer to the following
figure for signal waveforms).
Figure 32-3. Programming the EEPROM Waveforms
RDY/BSY
WR
OE
RESET+12V
PAGEL
BS2
0x11 ADDR. HIGH
DATA
ADDR. LOW DATA ADDR. LOW DATA XX
XA1
XA0
BS1
XTAL1
XX
A G B C E B C E L
K
32.8.6 Reading the Flash
The algorithm for reading the Flash memory is as follows (refer to 32.8.4 Programming the Flash in this
chapter for details on Command and Address loading):
1. Step A: Load Command “0000 0010”.
2. Step G: Load Address High Byte (0x00 - 0xFF).
3. Step B: Load Address Low Byte (0x00 - 0xFF).
4. Set OE to “0”, and BS1 to “0”. The Flash word low byte can now be read at DATA.
5. Set BS1 to “1”. The Flash word high byte can now be read at DATA.
6. Set OE to “1”.
32.8.7 Reading the EEPROM
The algorithm for reading the EEPROM memory is as follows (refer to 32.8.4 Programming the Flash for
details on Command and Address loading):
ATmega48PA/88PA/168PA
Memory Programming (MEMPROG)
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Datasheet Complete
DS40002011A-page 375