Datasheet

3. Give XTAL1 a positive pulse. This loads the command, and the internal write signals are Reset.
Figure 32-2. Addressing the Flash Which is Organized in Pages
PROGRAM MEMORY
WORD ADDRESS
WITHIN A PAGE
PAGE ADDRESS
WITHIN THE FLASH
INSTRUCTION WORD
PAGE
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
PAGE
PCWORDPCPAGE
PCMSB
PAGEMSB
PROGRAM
COUNTER
Note: PCPAGE and PCWORD are listed in table No. of Words in a Page and No. of Pages in the Flash
in Page Size section.
Programming the Flash Waveforms
RDY/BSY
WR
OE
RESET+12V
PAGEL
BS2
0x10 ADDR. LOW
ADDR. HIGH
DATA
DATA LOW DATA HIGH
ADDR. LOW DATA LOW DATA HIGH
XA1
XA0
BS1
XTAL1
XX XX
XX
A B C D E B C D E G H
F
Note: “XX” is don’t care. The letters refer to the programming description above.
32.8.5 Programming the EEPROM
The EEPROM is organized in pages, refer to the table, number of words in a page and number of pages
in the EEPROM, in the page size section. When programming the EEPROM, the program data is latched
into a page buffer. This allows one page of data to be programmed simultaneously. The programming
ATmega48PA/88PA/168PA
Memory Programming (MEMPROG)
© 2018 Microchip Technology Inc.
Datasheet Complete
DS40002011A-page 374