Datasheet

8Atmel ATA6826C [DATASHEET]
9213D–AUTO–09/12
7. Noise and Surge Immunity
Parameters Test Conditions Value
Conducted interferences ISO 7637-1 Level 4
(1)
Interference suppression VDE 0879 Part 2 Level 5
ESD (Human Body Model); pins 2, 12, 13 vs. GND
ESD (Human Body Model), all other pins
HBM: AEC-Q100-002-Ref-D
CEI/IEC 60749-26:2006
ESDA/JEDEC JS-001-2010
8kV
5kV
CDM (Charged Device Model) ANSI/ESD S5.3.1-2009 1kV
MM (Machine Model)
AEC Q100-003-REV-E
ANSI/ESD S5.2-2009
250V
Note: Test pulse 5: V
smax
= 40V
8. Electrical Characteristics
7.5V < V
VS
< 40V; 4.75V < V
VCC
< 5.25V; INH = High; –40°C < T
j
< 150°C; unless otherwise specified, all values refer to GND pins.
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
1 Current Consumption
1.1 Quiescent current VS V
VS
< 20V, INH = low 3 I
VS
1 2 µA A
1.2 Quiescent current VCC
4.75V < V
VCC
< 5.25V,
INH = low
11 I
VCC
15 25 µA A
1.3 Supply current VS
V
VS
< 20V normal
operating, all outputs off
3 I
VS
4 6 mA A
1.4 Supply current VCC
4.75V < V
VCC
< 5.25V,
normal operating
11 I
VCC
350 500 µA A
1.5 Discharge current VS
V
VS
= 32.5V,
INH = low
3 I
VS
0.5 5.5 mA A
1.6 Discharge current VS
V
VS
= 40V,
INH = low
3 I
VS
2.5 10 mA A
2 Undervoltage Detection, Power-on Reset
2.1
Power-on reset
threshold
11 V
VCC
3.2 3.9 4.4 V A
2.2
Power-on reset
delay time
After switching on V
CC
t
dPor
30 95 190 µs A
2.3a
Undervoltage-detection
threshold (down)
V
CC
= 5V 3 V
Uv
5.6 6.5 V A
2.3b
Undervoltage-detection
threshold (up)
V
CC
= 5V 3 V
Uv
6.0 7.0 V A
2.4
Undervoltage-detection
hysteresis
V
CC
= 5V 3 ΔV
Uv
0.6 V A
2.5
Undervoltage-detection
delay time
t
dUV
10 40 µs A
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note: 1. Delay time between rising edge of the input signal at pin CS after data transmission and switch on output stages to 90% of
final level. Device not in standby for t > 1ms