Datasheet

9Atmel ATA5021 [DATASHEET]
9145G–AUTO–09/12
5. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters Pin Symbol Min. Max. Unit
Voltage range on pin VDD V
VDD,max
–0.4 +6.5 V
Voltage range on pins V
IO,max
–0.4 V
VDD
+ 0.4 V
Output current I
OUT,max
–2 +2 mA
HBM ESD
ANSI/ESD-STM5.1
JESD22-A114
AEC-Q100 (002)
V
ESD,HBM
±2 kV
Ambient temperature range T
amb
–40 +125 °C
Storage temperature range T
sto
–55 +150 °C
6. Thermal Resistance
Parameters Symbol Value Unit
Thermal case resistance junction ambient R
thJA
180 K/W
7. Electrical Characteristics
V
VDD
= 5V, T
amb
= –40°C to +125°C, reference point is pin 7, unless otherwise specified.
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
Power Supply
1.1 Current Consumption
V
VDD
= 5V
R
1
= 66kΩ
C
1
= 470pF
6 I
VDD
25 µA A
1.2
Power-on-reset
Release reset state
with rising supply
voltage
6 V
POR1
3.9 4.5 V A
1.3
Get reset state with
falling supply voltage
6 V
POR2
3.8 4.4 V A
1.4 POR hysteresis 6 V
POR,hys
40 200 mV A
1.5
Reset Level for low
V
DD
V
VDD
= 1V to V
POR1
I
RTO
= 300µA
5 V
RST
0.1 V
VDD
A
Inputs
2.1 Logical “high” V
VDD
= 5V 1, 2, 3 V
IH
3.4 V A
2.2 Logical “low” V
VDD
= 5V 1, 2, 3 V
IL
1.6 V A
2.3 Hysteresis V
VDD
= 5V 1, 2, 3 V
IN_hys
0.6 1 1.4 V A
2.4 Pull-down current
V
IN
= 5V
V
VDD
= 5V
1 I
PD
5 20 µA A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Frequency deviation also depends on the tolerances of the external components
2. Cycle = Period of clock frequency (see Section 3.2 on page 4)