Datasheet

Table Of Contents
1051
SAM9N12/SAM9CN11/SAM9CN12 [DATASHEET]
11063K–ATARM–05-Nov-13
48.6.1 32 kHz Crystal Characteristics
48.6.2 XIN32 Clock Characteristics
Note: 1. These characteristics apply only when the 32.768KHz Oscillator is in bypass mode (i.e. when RCEN = 0, OSC32EN =
0, OSCSEL = 1 and OSC32BYP = 1) in the SCKCR register. See “Slow Clock Selection” in the PMC section.
48.7 32 kHz RC Oscillator Characteristics
Table 48-12. 32 kHz Crystal Characteristics
Symbol Parameter Conditions Min Typ Max Unit
ESR Equivalent Series Resistor Rs Crystal @ 32.768 kHz 50 100 kΩ
C
M
Motional Capacitance Crystal @ 32.768 kHz 0.6 3 fF
C
S
Shunt Capacitance Crystal @ 32.768 kHz 0.6 2 pF
I
DD ON
Current dissipation
R
S
= 50 kΩ
(1)
C
CRYSTAL32
= 6 pF 0.55 1.3 µA
R
S
= 50 kΩ
(1)
C
CRYSTAL32
= 12.5pF 0.85 1.6 µA
R
S
= 100 kΩ
(1)
C
CRYSTAL32
= 6 pF 0.7 2.0 µA
R
S
= 100 kΩ
(1)
C
CRYSTAL32
= 12.5 pF 1.1 2.2 µA
I
DD STDBY
Standby consumption 0.3 µA
Table 48-13. XIN32 Clock Electrical Characteristics
Symbol Parameter Conditions Min Max Units
1/(t
CPXIN32
) XIN32 Clock Frequency 44 kHz
t
CPXIN32
XIN32 Clock Period 22 µs
t
CHXIN32
XIN32 Clock High Half-period 11 µs
t
CLXIN32
XIN32 Clock Low Half-period 11 µs
t
CLCH32
XIN32 Clock Rise time 400 ns
t
CLCL32
XIN32 Clock Fall time 400 ns
C
IN32
XIN32 Input Capacitance
(1)
6pF
R
IN32
XIN32 Pull-down Resistor
(1)
4MΩ
V
IN32
XIN32 Voltage
(1)
VDDBU VDDBU V
V
INIL32
XIN32 Input Low Level Voltage
(1)
-0.3 0.3 x V
VDDBU
V
V
INIH32
XIN32 Input High Level Voltage
(1)
0.7 x V
VDDBU
V
VDDBU
+ 0.3 V
Table 48-14. RC Oscillator Characteristics
Symbol Parameter Conditions Min Typ Max Unit
1/(t
CPRCz
) Crystal Oscillator Frequency 20 32 44 kHz
Duty Cycle 45 55 %
t
ST
Startup Time 75 µs
I
DD ON
Power Consumption Oscillation After startup time 1.1 2.1 µA
I
DD STDBY
Standby consumption 0.4 µA