Datasheet

21
6222GS–ATARM–6-Sep-11
SAM7SE512/256/32 Summary
8. Memories
• 512 Kbytes of Flash Memory (SAM7SE512)
– dual plane
– two contiguous banks of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 32 lock bits, each protecting 32 lock regions of 64 pages
– Protection Mode to secure contents of the Flash
• 256 Kbytes of Flash Memory (SAM7SE256)
– single plane
– one bank of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 cycles, 10-year data retention capability
– 16 lock bits, each protecting 16 lock regions of 64 pages
– Protection Mode to secure contents of the Flash
• 32 Kbytes of Flash Memory (SAM7SE32)
– single plane
– one bank of 256 pages of 128 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 cycles, 10-year data retention capability
– 8 lock bits, each protecting 8 lock regions of 32 pages
– Protection Mode to secure contents of the Flash
• 32 Kbytes of Fast SRAM (SAM7SE512/256)
– Single-cycle access at full speed
• 8 Kbytes of Fast SRAM (SAM7SE32)
– Single-cycle access at full speed