Datasheet

569
SAM7S Series [DATASHEET]
6175M–ATARM–26-Oct-12
37.4.3 Crystal Characteristics
37.4.4 XIN Clock Characteristics
Note: 1. These characteristics apply only when the Main Oscillator is in bypass mode (i.e., when MOSCEN = 0 and OSCBYPASS = 1
in the CKGR_MOR register, see the Clock Generator Main Oscillator Register.
Figure 37-2. XIN Clock Timing
Table 37-11. Crystal Characteristics
Symbol Parameter Conditions Min Typ Max Unit
ESR Equivalent Series Resistor Rs
Fundamental @3 MHz
Fundamental @8 MHz
Fundamental @16 MHz
Fundamental @20 MHz
200
100
80
50
W
C
M
Motional capacitance 8fF
C
SHUNT
Shunt capacitance 7pF
Table 37-12. XIN Clock Electrical Characteristics
Symbol Parameter Conditions Min Max Units
1/(t
CPXIN
) XIN Clock Frequency
(1)
50.0 MHz
t
CPXIN
XIN Clock Period
(1)
20.0 ns
t
CHXIN
XIN Clock High Half-period
(1)
8.0 ns
t
CLXIN
XIN Clock Low Half-period
(1)
8.0 ns
t
CLCH
Rise Time
(1)
400
t
CHCL
Fall Time
(1)
400
C
IN
XIN Input Capacitance
(1)
46 pF
R
IN
XIN Pull-down Resistor
(1)
500 kΩ
V
XIN_IL
V
XIN
Input Low-level Voltage
(1)
-0.3 0.3 x V
DDPLL
V
V
XIN_IH
V
XIN
Input High-level Voltage
(1)
0.7 x V
DDPLL
1.95 V
I
DDBP
Bypass Current Consumption
(1)
15 µW/MHz
t
CPXIN
t
CPXIN
t
CPXIN
t
CHXIN
t
CLCH
t
CHCL
V
XIN_IL
V
XIN_IH