Datasheet

601
6120F–ATARM–03-Oct-06
AT91SAM7X512/256/128 Preliminary
38.4.3 Crystal Characteristics
38.4.4 XIN Clock Characteristics
Note: 1. These characteristics apply only when the Main Oscillator is in bypass mode (i.e., when MOSCEN = 0 and OSCBYPASS = 1
in the CKGR_MOR register, see the Clock Generator Main Oscillator Register.
Table 38-10. Crystal Characteristics
Symbol Parameter Conditions Min Typ Max Unit
ESR Equivalent Series Resistor Rs
Fundamental @3 MHz
Fundamental @8 MHz
Fundamental @16 MHz
Fundamental @20 MHz
200
100
80
50
Ω
C
M
Motional capacitance 8fF
C
SHUNT
Shunt capacitance 7pF
Table 38-11. XIN Clock Electrical Characteristics
Symbol Parameter Conditions Min Max Units
1/(t
CPXIN
) XIN Clock Frequency
(1)
50.0 MHz
t
CPXIN
XIN Clock Period
(1)
20.0 ns
t
CHXIN
XIN Clock High Half-period
(1)
0.4 x t
CPXIN
0.6 x t
CPXIN
t
CLXIN
XIN Clock Low Half-period
(1)
0.4 x t
CPXIN
0.6 x t
CPXIN
C
IN
XIN Input Capacitance
(1)
46 pF
R
IN
XIN Pull-down Resistor
(1)
500 kΩ
V
XIN_IL
V
XIN
Input Low-level Voltage
(1)
-0.3 0.2 x V
DDPLL
V
V
XIN_IH
V
XIN
Input High-level Voltage
(1)
0.8 x V
DDPLL
1.95 V
I
DDBP
Bypass Current Consumption
(1)
15 µW/MHz