Datasheet

298
4317K–AVR–03/2013
AT90PWM2/3/2B/3B
Figure 25-11. Serial Programming Waveforms
MSB
MSB
LSB
LSB
SERIAL CLOCK INPUT
(SCK)
SERIAL DATA INPUT
(MOSI)
(MISO)
SAMPLE
SERIAL DATA OUTPUT
Table 25-16. Serial Programming Instruction Set
Instruction
Instruction Format
OperationByte 1 Byte 2 Byte 3 Byte4
Programming Enable
1010 1100 0101 0011 xxxx xxxx xxxx xxxx Enable Serial Programming after
RESET
goes low.
Chip Erase 1010 1100 100x xxxx xxxx xxxx xxxx xxxx Chip Erase EEPROM and Flash.
Read Program Memory
0010 H000 000a aaaa bbbb bbbb oooo oooo Read H (high or low) data o from
Program memory at word address a:b.
Load Program Memory Page
0100 H000 000x xxxx xxbb bbbb iiii iiii Write H (high or low) data i to Program
Memory page at word address b. Data
low byte must be loaded before Data
high byte is applied within the same
address.
Write Program Memory Page
0100 1100 000a aaaa bbxx xxxx xxxx xxxx Write Program Memory Page at
address a:b.
Read EEPROM Memory
1010 0000 000x xxaa bbbb bbbb oooo oooo Read data o from EEPROM memory at
address a:b.
Write EEPROM Memory
1100 0000 000x xxaa bbbb bbbb iiii iiii Write data i to EEPROM memory at
address a:b.
Load EEPROM Memory
Page (page access)
1100 0001 0000 0000 0000 00bb iiii iiii Load data i to EEPROM memory page
buffer. After data is loaded, program
EEPROM page.
Write EEPROM Memory
Page (page access)
1100 0010 00xx xxaa bbbb bb00 xxxx xxxx
Write EEPROM page at address a:b.
Read Lock bits
0101 1000 0000 0000 xxxx xxxx xxoo oooo Read Lock bits. “0” = programmed, “1”
= unprogrammed. See Table 25-1 on
page 280 for details.
Write Lock bits
1010 1100 111x xxxx xxxx xxxx 11ii iiii Write Lock bits. Set bits = “0” to
program Lock bits. See
Table 25-1 on
page 280 for details.
Read Signature Byte 0011 0000 000x xxxx xxxx xxbb oooo oooo Read Signature Byte o at address b.
Write Fuse bits
1010 1100 1010 0000 xxxx xxxx iiii iiii Set bits = “0” to program, “1” to
unprogram. See Table XXX on page
XXX for details.