Datasheet

Table Of Contents
379
7682C–AUTO–04/08
AT90CAN32/64/128
Notes: 1. All DC Characteristics contained in this datasheet are based on simulation and characterization of other AVR microcontrol-
lers manufactured in the same process technology. These values are preliminary values representing design targets, and
will be updated after characterization of actual silicon.
Figure 27-6. External Memory Timing (SRWn1 = 0, SRWn0 = 0)
Table 27-14. External Data Memory Characteristics, V
CC
= 2.7 - 5.5 Volts, SRWn1 = 1, SRWn0 = 1
(1)
Symbol Parameter
4 MHz Oscillator Variable Oscillator
Unit
Min. Max. Min. Max.
0 1/t
CLCL
Oscillator Frequency 0.0 8 MHz
10 t
RLDV
Read Low to Data Valid 690 3.0 t
CLCL
– 60 ns
12 t
RLRH
RD Pulse Width 735 3.0 t
CLCL
– 15 ns
14 t
WHDX
Data Hold After WR High 485 2.0 t
CLCL
– 15 ns
15 t
DVWH
Data Valid to WR High 750 3.0 t
CLCL
ns
16 t
WLWH
WR Pulse Width 735 3.0 t
CLCL
– 15 ns
ALE
T1 T2 T3
Write
Read
WR
T4
A15:8
AddressPrev. addr.
DA7:0
Address DataPrev. data XX
RD
DA7:0 (XMBK = 0)
DataAddress
System Clock (CLK
CPU
)
1
4
2
7
6
3a
3b
5
8 12
16
13
10
11
14
15
9