Datasheet

AT30TSE004A [DATASHEET]
Atmel-8868C-DTS-AT30TSE004A-Datasheet_122013
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7.2 Serial EEPROM Write Operations
The 4-Kbit Serial EEPROM within the AT30TSE004A supports single Byte Write and Page Write operations up to the
maximum page size of 16 bytes in one operation. The only difference between a Byte Write and a Page Write
operation is the amount of data bytes loaded. Regardless of whether a Byte Write or Page Write operation is
performed, the internally self-timed write cycle will take the same amount of time to write the data to the addressed
memory location(s). Temperature sensor operations can be accessed during the write cycle to read the Temperature
Register or perform any other temperature sensor function.
Caution: All Byte Write and Page Write operations should be preceded by the SPA and or RPA commands to
ensure the internal address counter is located in the desired half of the memory.
If a Byte Write or Page Write operation is attempted to a protected quadrant, then the AT30TSE004A will
respond (ACK or NACK) to the Write operation according to Table 7-2.
Table 7-2. Serial EEPROM Acknowledge Status When Writing Data or Defining Write Protection
Quadrant
Status
Instruction
Sent
Instruction
Response
Word
Address
Sent
Word
Address
Response
Data Word
Sent
Data Word
Response
Write
Cycle
Write Protected
with Set RSWP
Set RSWP NACK Don’t Care NACK Don’t Care NACK No
Clear RSWP ACK Don’t Care ACK Don’t Care ACK Yes
Byte Write or
Page Write to
Protected Quadrant
ACK
Word
Address
ACK Data NACK No
Not Protected
Set RSWP or
Clear RSWP
ACK Don’t Care ACK Don’t Care ACK Yes
Byte Write or
Page Write
ACK
Word
Address
ACK Data ACK Yes