Datasheet

 2011-2013 Microchip Technology Inc. DS20002281B-page 5
MTD6505
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Power Supply Voltage (V
DD_MAX
) ...................... -0.7 to +7.0V
Maximum Output Voltage (V
OUT_MAX
) ............... -0.7 to +7.0V
Maximum Output Current
(2)
(I
OUT_MAX
) ....................1000 mA
FG Maximum Output Voltage (V
FG_MAX
) ........... -0.7 to +7.0V
FG Maximum Output Current (I
FG_MAX
) ......................5.0 mA
V
BIAS
Maximum Voltage (V
BIAS_MAX
) ................ -0.7 to +4.0V
PWM Maximum Voltage (V
PWM_MAX
) ................ -0.7 to +7.0V
Allowable Power Dissipation
(1)
(P
D_MAX
).........................1.5W
Max Junction Temperature (T
J
)................................... +150°C
ESD protection on all pins ................................................... ≥2kV
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
Note 1: Reference PCB, according to JEDEC
standard EIA/JESD 51-9.
2: I
OUT
is also internally limited, according to the
limits defined in the “Electrical Charac-
teristics” table.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for V
DD
= 2.0V to 5.5V, T
A
= +25°C
Parameters Sym Min Typ Max Units Conditions
Power Supply Voltage V
DD
2—5.5V
Power Supply Current I
VDD
—510mAV
DD
=5V
Standby Current I
VDD_STB
—3040µAPWM=0V, V
DD
=5V
(Standby mode)
OUT1, 2, 3
High Resistance
R
ON(H)
— 0.75 1.1 Ω I
OUT
= 0.5A, V
DD
=5V
Note 3
OUT1, 2, 3
Low Resistance
R
ON(L)
— 0.75 1.3 Ω I
OUT
= 0.5A, V
DD
=5V
Note 3
OUT1, 2, 3
Total Resistance
R
ON(H+L)
—1.5—Ω I
OUT
= 0.5A, V
DD
=5V
V
BIAS
Internal
Supply Voltage
V
BIAS
—3—VV
DD
= 3.2V to 5.5V
—V
DD
– 0.2 — V V
DD
<3.2V
PWM Input Frequency f
PWM
1—100kHz
PWM Input H Level V
PWM_H
0.55*V
DD
—V
DD
VV
DD
≥ 4.5V
PWM Input L Level V
PWM_L
0 — 0.2*V
DD
VV
DD
≥ 4.5V
PWM Internal Pull-Up
Resistor
R
PWM_0
—266—kΩ PWM = 0V
PWM Internal Pull-Up
Resistor
R
PWM
—133—kΩ PWM duty-cycle > 0%
DIR Input H Level V
DIR_H
0.55*V
DD
—V
DD
VV
DD
≥ 4.5V
DIR Input L Level V
DIR_L
0 — 0.2*V
DD
VV
DD
≥ 4.5V
DIR Internal Pull-Down
Resistor
R
DIR
100 — 200 kΩ
FG Output Pin Low
Level Voltage
V
OL_FG
——0.25VI
FG
=-1mA
Note 1: 750 mA is the standard option for MTD6505. Additional overcurrent protection levels are available upon
request. Please contact factory for different overcurrent protection values.
2: Related to the internal oscillator frequency (see Figure 2-1).
3: Minimum and maximum parameter is not production tested and is specified by design and validation.