Datasheet

93LC66A/B
DS21209C-page 2  1998 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Maximum Ratings*
Vcc ...................................................................................7.0V
All inputs and outputs w.r.t. Vss ...............-0.6V to Vcc +1.0V
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-65°C to +125°C
Soldering temperature of leads (10 seconds) .............+300°C
ESD protection on all pins................................................4 kV
*Notice: Stresses above those listed under “Maximum ratings” may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for extended peri-
ods may affect device reliability.
TABLE 1-1 PIN FUNCTION TABLE
Name Function
CS Chip Select
CLK Serial Data Clock
DI Serial Data Input
DO Serial Data Output
VSS Ground
NC No Connect
V
CC Power Supply
TABLE 1-2 DC AND AC ELECTRICAL CHARACTERISTICS
All parameters apply over the specified
operating ranges unless otherwise
noted
Commercial (C): VCC = +2.5V to +6.0V Tamb = 0°C to +70°C
Industrial (I): V
CC = +2.5V to +6.0V Tamb = -40°C to +85°C
Parameter Symbol Min. Max. Units Conditions
High level input voltage
V
IH1 2.0 Vcc +1 V 2.7V ≤ VCC ≤ 6.0V (Note 2)
V
IH2 0.7 VCC Vcc +1 V VCC < 2.7V
Low level input voltage
V
IL1-0.3 0.8 VVCC > 2.7V (Note 2)
V
IL2 -0.3 0.2 Vcc V VCC < 2.7V
Low level output voltage
V
OL1 — 0.4 V IOL = 2.1 µA; Vcc = 4.5V
V
OL2 — 0.2 V IOL =100 µA; Vcc = Vcc Min.
High level output voltage
V
OH12.4 — VIOH = -400 µA; Vcc = 4.5V
V
OH2VCC-0.2 — VIOH = -100 µA; Vcc = Vcc Min.
Input leakage current I
LI -10 10 µA VIN = VSS to VCC
Output leakage current ILO -10 10 µA VOUT = VSS to VCC
Pin capacitance
(all inputs/outputs)
C
IN, COUT — 7pF
V
IN/VOUT = 0 V (Notes 1 & 2)
Tamb = +25°C, F
CLK = 1 MHz
Operating current
I
CC read —
1
500
mA
µA
F
CLK = 2 MHz; Vcc = 6.0V
F
CLK = 1 MHz; Vcc = 3.0V
I
CC write — 1.5 mA
Standby current I
CCS — 1 µA CS = Vss; DI = VSS
Clock frequency FCLK —
2
1
MHz
MHz
V
CC > 4.5V
V
CC < 4.5V
Clock high time T
CKH 250 — ns
Clock low time T
CKL 250 — ns
Chip select setup time T
CSS 50 — ns Relative to CLK
Chip select hold time T
CSH 0 — ns Relative to CLK
Chip select low time T
CSL 250 — ns
Data input setup time T
DIS 100 — ns Relative to CLK
Data input hold time T
DIH 100 — ns Relative to CLK
Data output delay time T
PD — 400 ns CL = 100 pF
Data output disable time T
CZ — 100 ns CL = 100 pF (Note 2)
Status valid time T
SV — 500 ns CL = 100 pF
Program cycle time
T
WC — 6msERASE/WRITE mode
T
EC — 6 ms ERAL mode
T
WL — 15 ms WRAL mode
Endurance — 1M — cycles 25°C, V
CC = 5.0V, Block Mode (Note 3)
Note 1: This parameter is tested at Tamb = 25°C and Fclk = 1 MHz.
2: This parameter is periodically sampled and not 100% tested.
3: This application is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total
Endurance Model which may be obtained on our website.