Information

Memory Products
3
Serial EEPROM
Microchip oers the broadest range of Serial EEPROM devices. Our Serial EEPROMs are low-power, non-volatile memory devices
with wide operating ranges, small-size and byte-alterability, making them ideal for data and program storage. Serial EEPROMs can
be written more than 1 million times and retain data for over 200 years. Innovative low-power designs and extensive testing have
ensured industry-leading endurance and best-in-class quality.
Key Features
• Broad range of densities: 128 bits to 2 Mbit
• Serial architecture: I
2
C, SPI, UNI/O
®
bus, Single-Wire,
Microwire
• Tiny 2-, 3-, 5-, 6- and 8-pin packages; die, wafer and
WLCSP
• Innovative and low-power designs
• Industry-leading endurance
• Factory managed MAC address and serial numbering
• Wide temperature and voltage range
•
Operating voltage: 1.7 to 5.5V
•
Temperature range: up to 150°C
• Fast read and write times
• Flexible
•
Byte-write capability
•
Multiple package options
•
Custom programming options
•
Application-specic serial memory
• ISO/TS16949-compliant
• Automotive Grade 0, 1, 2 and 3 with PPAP support
Robust Design
• ESD protection
•
> 4000V Human Body Model (HBM)
•
> 400V Machine Model (MM)
•
> 1000V charged device model
• Latch-up protection > 200 mA on all pins
• ESD-induced latch-up > 100V (MM) on Vdd
• > 400V on all I/O
• Up to 150°C operation (read and write)
• Power-On Reset (POR) and Brown-Out Reset (BOR)
•
Eective protection against noisy automotive
environments
•
Eliminates false writes
• Schmitt Trigger input lters for noise reductions
• Complete traceability including die location on wafer
Industry-Leading Testing
Microchip’s best-in-class eld performance is the combined
result of world-class manufacturing, wafer-level burn-in and
wafer probe quality screens. Microchip’s Triple-Test Flow is
currently the most robust testing procedure for Serial EEPROM
devices in the industry. It tests each cell of each die three times
and performs extensive endurance and data retention tests
to ensure quality and reliability. Infant mortality of Microchip
Serial EEPROMs is among the lowest in the industry due to
this extensive testing, excellent fabrication and highly-reliable
memory cell design.
Triple-Test Flow
Microchip tests every cell in wafer form twice, then performs a
nal test after assembly.
Main Goal: Zero Defects
• Full verication of data sheet parameters for functional
compliance at die and package level
• Removal of manufacturing defects to ensure highest quality
and reliability
• Screening out of functional devices that may fail in the future
1.
Wafer Probe
2.
Wafer Probe
Retention
Bake
Full-functional tests on 100%
of die and bits; 85 or 125°C
5,000 E/W cycles on all bits
2nd 100% bit test (25°C)
full-functional screen
250°C up to 24 hours
(equivalent to 100 years
at 100°C)
2
.
W
a
f
e
r Pr
obe
n
tio
n
ke
2
nd 100% bit test
(
25
°
C
)
full-functional scree
n
24 hours
o
100
y
ears
0
°C)
3.
Assembly
and Final
Test
Any die with charge loss in
any cell between the two
probes is rejected to
prevent infant mortality.