Information

www.microchip.com/memory
14
Parallel Flash
Bus Product* Density Organization Access Time Operating Voltage Temperature Range (°C) E/W Endurance (Minimum) Data Retention (Minimum) (years) Write Spped (Typical) Typ. Standby Current Write Protect Hardware Write Protect Software Protected Array Size Special/Unique Features Packages**
Parallel Flash Memory
x8
SST39SF010A 1 Mb 128K × 8 70 ns 4.5–5.5V
0 to +70
−40 to +85
100,000 cycles 100
14 µs
(Byte Program)
30 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
32L-PLCC, 32L-PDIP,
32L-TSOP
SST39LF010 1 Mb 512K × 8 55 ns 3.0–3.6V 0 to +70 100,000 cycles 100
14 µs
(Byte Program)
1 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA, 32L-TSOP,
32L-PLCC
SST39VF010 1 Mb 512K × 8 70 ns 2.7–3.6V
0 to +70
−40 to +85
100,000 cycles 100
14 µs
(Byte Program)
1 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA, 32L-TSOP,
32L-PLCC
SST39LF020 2 Mb 512K × 8 55 ns 3.0–3.6V 0 to +70 100,000 cycles 100
14 µs
(Byte Program)
1 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA, 32L-TSOP,
32L-PLCC
SST39SF020A 2 Mb 256K × 8 55/70 ns 4.5–5.5V
0 to +70
−40 to +85
100,000 cycles 100
14 µs
(Byte Program)
30 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
32L-PLCC, 32L-PDIP,
32L-TSOP
SST39VF020 2 Mb 512K × 8 70 ns 2.7–3.6V
0 to +70
−40 to +85
100,000 cycles 100
14 µs
(Byte Program)
1 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA, 32L-TSOP,
32L-PLCC
SST39SF040 4 Mb 512K × 8 70 ns 4.5–5.5V
0 to +70
−40 to +85
100,000 cycles 100
14 µs
(Byte Program)
30 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
32L-PLCC, 32L-PDIP,
32L-TSOP
SST39LF040 4 Mb 512K × 8 55 ns 3.0–3.6V 0 to +70 100,000 cycles 100
14 µs
(Byte Program)
1 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA, 32L-TSOP,
32L-PLCC
SST39VF040 4 Mb 512K × 8 70 ns 2.7–3.6V
0 to +70
−40 to +85
100,000 cycles 100
14 µs
(Byte Program)
1 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA, 32L-TSOP,
32L-PLCC
SST39VF168X 16 Mb 2M × 8 70 ns 2.7–3.6V
0 to +70
−40 to +85
100,000 cycles 100
7 µs
(Byte Program)
3 µA Y – 64 KB
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA, 48L-TSOP
x16
SST39LF200A 2 Mb 128K × 16 55 ns 3.0–3.6V 0 to +70
100,000 cycles
(typical)
100
14 µs
(Word Program)
3 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA, 48L-TSOP
SST39VF200A 2 Mb 128K × 16 70 ns 2.7–3.6V
0 to +70
−40 to +85
100,000 cycles
(typical)
100
14 µs
(Word Program)
3 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA, 48L-TSOP,
48B-WFBGA
SST39LF40XC 4 Mb 256K × 16 55 ns 3.0–3.6V 0 to +70 100,000 cycles 100
7 µs
(Word Program)
3 µA Y – 8 KB
Fast read, program and erase; Low power; Small
erase sector; Industry standard command set and
boot block structure
48B-TFBGA, 48L-TSOP,
48B-WFBGA
SST39WF400B 4 Mb 256K × 16 70 ns 1.65–1.95V
0 to +70
−40 to +85
100,000 cycles
(typical)
100
28 µs
(Word Program)
40 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA,
48B-WFBGA, 48B-XFBGA
SST39VF40XC 4 Mb 256K × 16 70 ns 2.7–3.6V
0 to +70
−40 to +85
100,000 cycles 100
7 µs
(Word Program)
3 µA Y – 8 KB
Fast read, program and erase; Low power; Small
erase sector; Industry standard command set and
boot block structure
48B-TFBGA, 48L-TSOP,
48B-WFBGA
SST39WF800B 8 Mb 512K × 16 70 ns 1.65–1.95V
0 to +70
−40 to +85
100,000 cycles
(typical)
100
28 µs
(Word Program)
40 µA – – N/A
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA,
48B-WFBGA, 48B-XFBGA
SST39LF80XC 8 Mb 512K × 16 55 ns 3.0–3.6V 0 to +70 100,000 cycles 100
7 µs
(Word Program)
3 µA Y – N/A
Fast read, program and erase; Low power; Small
erase sector; Industry standard command set and
boot block structure
48B-TFBGA, 48L-TSOP,
48B-WFBGA
SST39VF80XC 8 Mb 512K × 16 70 ns 2.7–3.6V
0 to 70
−40 to +85
100,000 cycles 100
7 µs
(Word Program)
3 µA Y – N/A
Fast read, program and erase; Low power; Small
erase sector; Industry standard command set and
boot block structure
48B-TFBGA, 48L-TSOP,
48B-WFBGA
SST39WF160X 16 Mb 1M × 16 70 ns 1.65–1.95V
0 to 70
−40 to +85
100,000 cycles
(typical)
100
28 µs (Word
Program)
40 µA Y – 64 KB
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA,
48B-WFBGA, 48B-XFBGA
SST39VF160XC 16 Mb 1M × 16 70 ns 2.7–3.6V
0 to +70
−40 to +85
100,000 cycles 100 7 µs (Word Program) 3 µA Y – 8 KB
Fast read, program and erase; Low power; Small
erase sector; Industry standard command set and
boot block structure
48B-TFBGA, 48L-TSOP,
48B-WFBGA
SST39VF160X 16 Mb 2M × 8 70 ns 2.7–3.6V
0 to +70
−40 to +85
100,000 cycles 100 7 µs (Byte Program) 3 µA Y – 64 KB
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA, 48L-TSOP
SST39VF320XB 32 Mb 2M × 16 70 ns 2.7–3.6V
0 to +70
−40 to +85
100,000 cycles 100 7 µs (Word Program) 4 µA Y – 32 KB
Fast read, program and erase;
Low power; Small erase sector
48B-TFBGA, 48L-TSOP
SST39VF320XC 32 Mb 2M × 16 70 ns 2.7–3.6V
0 to +70
−40 to +85
100,000 cycles 100 7 µs (Word Program) 4 µA Y – 8 KB
Fast read, program and erase; Low power; Small
erase sector; Industry standard command set and
boot block structure
48B-TFBGA, 48L-TSOP
SST38VF640X 64 Mb 4M × 16 70 ns 2.7–3.6V
0 to +70
−40 to +85
100,000 cycles 100
7 µs/1.75 µs (Write
Buer Program)
3 µA Y Y
32 KB/
8 KB
Fast read, program and erase; Low power; Small
erase sector Industry standard command set and
boot block structure, Security features
48B-TFBGA, 48L-TSOP
SST38VF640XB 64 Mb 4M × 16 70 ns 2.7–3.6V
0 to +70
−40 to +85
100,000 cycles 100
7 µs/1.75 µs (Write
Buer Program)
3 µA Y Y
32 KB/
8 KB
Fast read, program and erase; Low power; Industry
standard command set and boot block structure,
Security features
48B-TFBGA, 48L-TSOP
Parallel Flash
High Performance, Low-Power