Information

www.microchip.com/memory
12
*Data varies for dierent devices, please refer to the datasheet for details.
Serial Flash
Bus Product Density Organization Max. Clock Frequency Operating Voltage (V) Temperature Range (°C) E/W Endurance (Minimum) Data Retention (Minimum) (Years) Write Speed (Typical) Max. Standby Current Special/Unique Features Packages*
x1
SST25VF512A 512 Kb 64K × 8 33 MHz 2.7–3.6
0 to +70
−40 to +85
−20 to +85
100,000 cycles
(typical)
100
14 µs (Byte
Program)
8 µA
Auto address increment programming,
Fast read, program and erase
8L-SOIC,
8C-WSON
SST25VF010A 1 Mb 128K × 8 33 MHz 2.7–3.6
0 to +70
−40 to +85
−20 to +85
100,000 cycles
(typical)
100
14 µs (Byte
Program)
8 µA
Auto address increment programming,
Fast read, program and erase
8L-SOIC,
8C-WSON
SST25VF020B 2 Mb 256K × 8 80 MHz 2.7–3.6
0 to +70
−40 to +85
100,000 cycles
(typical)
100
7 µs (Word
Program)
5 µA
Auto address increment programming,
Fast read, program and erase
8L-SOIC,
8C-WSON
SST25WF020A 2 Mb 256K × 8 40 MHz 1.65–1.95
0 to +70
−40 to +85
100,000 cycles
(typical)
20
3 ms (Page
Program)
10 µA
Single-input page program, Fast read,
program and erase
8L-SOIC,
8C-WSON,
8C-USON,
9B-WLCSP
SST25PF040C 4 Mb 512K × 8 40 MHz 2.3–3.6 −40 to +85
100,000 cycles
(minimum)
20
4 ms/256
bytes (typical)
50 µA
Software Write Protection- Write
protection through Block-Protection bits
8C-USON
8L-SOIC
8C-WDFN
SST25VF040B 4 Mb 512K × 8 40 MHz 2.7–3.6 −40 to +85
100,000 cycles
(typical)
100
7 µs (Word
Program)
5 µA
Auto address increment programming,
Fast read, program and erase
8L-SOIC,
8C-WSON
SST25VF080B 8 Mb 1M × 8 40 MHz 2.7–3.6 −40 to +85
100,000 cycles
(typical)
100
7 µs (Word
Program)
5 µA
Auto address increment programming,
Fast read, program and erase
8L-SOIC,
8C-WSON,
8B-XFBGA
SST25VF016B 16 Mb 2M × 8 50 MHz 2.7–3.6 −40 to +85
100,000 cycles
(typical)
100
7 µs (Word
Program)
5 µA
Auto address increment programming,
Fast read, program and erase
8L-SOIC,
8C-WSON
x1, x2
SST25WF040B 4 Mb 512K × 8 40 MHz 1.65–1.95
0 to +70
−40 to +85
100,000 cycles
(typical)
20
1 ms (Page
Program)
10 µA
Dual output and dual I/O read, Single-
and dual-input page program, Fast read,
program and erase
8L-SOIC,
8C-USON,
9B-WLCSP
SST25WF080B 8 Mb 1M × 8 40 MHz 1.65–1.95
0 to +70
−40 to +85
100,000 cycles
(typical)
20
1 ms (Page
Program)
10 µA
Dual output and dual I/O read, Single-
and dual-input page program, Fast read,
program and erase
8L-SOIC,
8C-USON,
9B-WLCSP
x4
SST26VF016 16 Mb 2M × 8 80 MHz 2.7–3.6 −40 to +85
100,000 cycles
(minimum)
100
1 ms (Page
Program)
15 µA
Serial Quad I/O™ (SQI™) read/program/
erase, Burst read, Index jump feature,
Individual block read and write protection.
Fast read, program and erase
8L-SOIJ,
8C-WSON
SST26VF032 32 Mb 4M × 8 80 MHz 2.7–3.6 −40 to +85
100,000 cycles
(minimum)
100
1 ms (Page
Program)
15 µA
Serial Quad I/O (SQI) read/program/erase,
Burst read, Index jump feature, Individual
block read and write protection. Fast read,
program and erase
8L-SOIJ,
8C-WSON
SST26WF040B 4 Mb 512K × 8
104
MHz
1.65–1.95 −40 to +85
100,000 cycles
(minimum)
100
1.5 ms page
(typical)
40 µA
×1, ×2, ×4 Serial Peripheral Interface (SPI)
Protocol -Burst Modes, Software Write
Protection: Individual Block-Locking: 64
KByte blocks, two 32 KByte blocks, and
eight 8 KByte parameter blocks
8C-USON
8L-SOIC
8C-WDFN
8B-XFBGA
x1, x2, x4
SST26WF080B/BA 8 Mb 1M × 8
104
MHz
1.65–1.95 −40 to +85
100,000 cycles
(minimum)
100
1 ms (Page
Program)
40 µA
×1, ×2, ×4 read, Single-and quad-input
page program, Burst read, Write suspend,
Individual block read and write protection,
Fast read, program and erase
8L-SOIC,
8C-WSON,
8C-USON,
8B-WLCSP
SST26WF016B/BA 16 Mb 2M × 8
104
MHz
1.65–1.95 −40 to +85
100,000 cycles
(minimum)
100
1 ms (Page
Program)
40 µA
×1, ×2, ×4 read, Single-and quad-input
page program, Burst read, Write suspend,
Individual block read and write protection,
Fast read, program and erase
8L-SOIC,
8C-WSON,
8B-WLCSP
SST26WF064C 64 Mb 8M x 8
104
MHz
1.65–1.95 −40 to +85
100,000 cycles
(minimum)
100
1.5 ms (Page
Program)
40 µA
×1, ×2, ×4, DTR read, Single-and quad-
input page program, Burst read, Write
suspend, Individual block read and write
protection, Fast read, program and erase
8L-SOIJ,
16L-SOIC,
8C-WSON,
24B-TBGA
SST26VF016B 16 Mb 2M × 8
104
MHz
2.3–3.6 −40 to +105
100,000 cycles
(minimum)
100
1 ms (Page
Program)
45 µA
×1, ×2, ×4 read, Single-and quad-input
page program, Burst read, Write suspend,
Individual block read and write protection,
Fast read, program and erase
8L-SOIC,
8L-SOIJ,
8C-WSON
SST26VF032B/BA 32 Mb 4M × 8
104
MHz
2.3–3.6 −40 to +105
100,000 cycles
(minimum)
100
1 ms (Page
Program)
45 µA
×1, ×2, ×4 read, Single-and quad-input
page program, Burst read, Write suspend,
Individual block read and write protection,
Fast read, program and erase
8L-SOIJ,
8C-WSON,
24B-TBGA
SST26VF064B/BA 64 Mb 8M × 8
104
MHz
2.3–3.6 −40 to +105
100,000 cycles
(minimum)
100
1 ms (Page
Program)
45 µA
×1, ×2, ×4 read, Single-and quad-input
page program, Burst read, Write suspend,
Individual block read and write protection,
Fast read, program and erase
8L-SOIJ,
16L-SOIC,
8C-WSON,
8C-TDFN-S,
24B-TBGA
Serial Flash
Small Footprint Serial Peripheral Interface Flash