Datasheet

23LCV512
DS25157A-page 2 Preliminary  2012 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
VCC.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V
SS ......................................................................................................... -0.3V to VCC +0.3V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature under bias...............................................................................................................-40°C to +85°C
TABLE 1-1: DC CHARACTERISTICS
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS
Industrial (I): T
A = -40°C to +85°C
Param.
No.
Sym. Characteristic Min. Typ.
(1)
Max. Units Test Conditions
D001 V
CC Supply voltage 2.5 — 5.5 V 23LCV512
D002 VIH High-level input
voltage
.7 VCC —VCC +0.3 V
D003 V
IL Low-level input
voltage
-0.3 — 0.10xV CC V23LCV512
D004 V
OL Low-level output
voltage
——0.2VIOL = 1 mA
D005 V
OH High-level output
voltage
VCC -0.5 — — V IOH = -400 A
D006 I
LI Input leakage
current
—— ±1ACS = VCC, VIN = VSS OR VCC
D007 ILO Output leakage
current
—— ±1ACS = VCC, VOUT = VSS OR VCC
D008 ICC Read Operating current — 3 10 mA FCLK = 20 MHz; SO = O, 5.5V
D009 I
CCS Standby current — 4 10 ACS = VCC = 5.5V, Inputs tied to
V
CC or VSS
D010 CINT Input capacitance — — 7 pF VCC = 0V, f = 1 MHz, Ta = 25°C
(Note 1)
D011 V
DR RAM data retention
voltage
—1.0 — V(Note 2)
D012 V
TRIP VBAT Change Over 1.6 1.8 2.0 V Typical at Ta = 25°C
(Note 1)
D013 VBAT VBAT Voltage Range 1.4 — 3.6 V (Note 1)
D014 IBAT V
BAT Current — 1 — A Typical at 2.5V, Ta = 25°C
(Note 1)
Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room
temperature (25°C).
2: This is the limit to which V
DD can be lowered without losing RAM data. This parameter is periodically
sampled and not 100% tested.