Datasheet

23A256/23K256
DS22100F-page 2  2008-2011 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
VCC.............................................................................................................................................................................4.5V
All inputs and outputs w.r.t. V
SS ......................................................................................................... -0.3V to VCC +0.3V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias...............................................................................................................-40°C to 125°C
ESD protection on all pins...........................................................................................................................................2kV
TABLE 1-1: DC CHARACTERISTICS
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS
Industrial (I): TA = -40°C to +85°C
Automotive (E): T
A = -40°C to +125°C
Param.
No.
Sym. Characteristic Min. Typ
(1)
Max. Units Test Conditions
D001 VCC Supply voltage 1.5 — 1.95 V 23A256 (I-Temp)
D001 V
CC Supply voltage 2.7 — 3.6 V 23K256 (I,E-Temp)
D002 VIH High-level input
voltage
.7 VCC —VCC +0.3 V
D003 V
IL Low-level input
voltage
-0.3 — 0.2xV CC
0.15xV CC
V
V 23K256 (E-Temp)
D004 V
OL Low-level output
voltage
——0.2VIOL = 1 mA
D005 V
OH High-level output
voltage
VCC -0.5 — — V IOH = -400 A
D006 I
LI Input leakage
current
——±0.5ACS = VCC, VIN = VSS OR VCC
D007 ILO Output leakage
current
——±0.5ACS = VCC, VOUT = VSS OR VCC
D008 ICC Read
Operating current
—
—
—
—
—
—
3
6
10
mA
mA
mA
FCLK = 1 MHz; SO = O
F
CLK = 10 MHz; SO = O
F
CLK = 20 MHz; SO = O
D009 I
CCS
Standby current
—
—
—
0.2
1
5
1
4
10
A
A
A
CS
= VCC = 1.8V, Inputs tied to VCC
or V
SS
CS = VCC = 3.6V, Inputs tied to VCC
or V
SS
CS = VCC = 3.6V, Inputs tied to VCC
or V
SS @ 125°C
D010 C
INT Input capacitance 7 pF VCC = 0V, f = 1 MHz, Ta = 25°C
(Note 1)
D011 V
DR RAM data retention
voltage
(2)
—1.2— V
Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room
temperature (25°C).
2: This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically
sampled and not 100% tested.