Datasheet

 2011 Microchip Technology Inc. DS22067J-page 3
11XX
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
VCC.............................................................................................................................................................................6.5V
SCIO w.r.t. V
SS.....................................................................................................................................-0.6V to VCC+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias...............................................................................................................-40°C to 125°C
ESD protection on all pins..........................................................................................................................................4 kV
TABLE 1-1: DC CHARACTERISTICS
† NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics:
Industrial (I): V
CC = 2.5V to 5.5V TA = -40°C to +85°C
V
CC = 1.8V to 2.5V TA = -20°C to +85°C
Automotive (E): V
CC = 2.5V to 5.5V TA = -40°C to +125°C
Param.
No.
Sym. Characteristic Min. Max. Units Test Conditions
D1 V
IH High-level input
voltage
0.7*VCC VCC+1 V
D2 V
IL Low-level input
voltage
-0.3
-0.3
0.3*VCC
0.2*VCC
V
V
VCC2.5V
V
CC < 2.5V
D3 VHYS Hysteresis of Schmitt
Trigger inputs (SCIO)
0.05*Vcc — V VCC2.5V (Note 1)
D4 V
OH High-level output
voltage
VCC -0.5
V
CC -0.5
—
—
V
V
I
OH = -300 A, VCC = 5.5V
I
OH = -200 A, Vcc = 2.5V
D5 V
OL Low-level output
voltage
—
—
0.4
0.4
V
V
IOI = 300 A, VCC = 5.5V
I
OI = 200 A, Vcc = 2.5V
D6 IO Output current limit
(Note 2)
—
—
±4
±3
mA
mA
VCC = 5.5V (Note 1)
Vcc = 2.5V (Note 1)
D7 I
LI Input leakage current
(SCIO)
—±1AVIN = VSS or VCC
D8 CINT Internal Capacitance
(all inputs and
outputs)
—7pFT
A = 25°C, FCLK = 1 MHz,
V
CC = 5.0V (Note 1)
D9 I
CC Read Read Operating
Current
—
—
3
1
mA
mA
VCC=5.5V; FBUS=100 kHz, CB=100 pF
V
CC=2.5V; FBUS=100 kHz, CB=100 pF
D10 I
CC Write Write Operating
Current
—
—
5
3
mA
mA
VCC = 5.5V
V
CC = 2.5V
D11 Iccs Standby Current —
—
5
1
A
A
VCC = 5.5V
T
A = 125°C
VCC = 5.5V
T
A = 85°C
D12 I
CCI Idle Mode Current — 50 AVCC = 5.5V
Note 1: This parameter is periodically sampled and not 100% tested.
2: The SCIO output driver impedance will vary to ensure IO is not exceeded.