Specifications

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Rugged aluminium electrolytic capacitors minimise non-ideal
parameters
MOSFETs incorporate latest package advances in standard PQFN
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The 146 RTI series of radial aluminium
capacitors from Vishay deliver enhanced
characteristics for smoothing, ltering,
buering and voltage-decoupling duties,
combining high-temperature capability,
low input impedance down to 18mΩ
at 100kHz, a high rated ripple current of
3200mA, and capacitance values ranging from
68μF to 6800μF.
As a family of highly rugged devices, the 146 RTI
series delivers the low-impedance and long-life
properties of Vishay’s 140RTM series capacitors
with the 125°C temperature capability of the
150RMI series. Rated operating voltages range
from 16V to 63V, and devices are available in
13 case sizes ranging from 10mm x 12mm
to18mm x 35mm.
The IRFH525x, IRFH530x and IRFHM83x
are 25V and 30V power MOSFETs that use
enhancements to the power-QFN (PQFN)
package to support up to 60% higher load-
current capability while also beneting
The devices are
polarised electrolytic
capacitors with a nonsolid, self-
healing electrolyte. They are engineered for
high performance and reliability in industrial,
automotive, telecommunications and military
systems. They also oer a very long useful
life of up to 6000 hours at 125°C. In addition,
charge- and discharge-proof properties free
these capacitors from traditional limitations
on peak current.
FEATURES:
 ±20% capacitance tolerance
 -55°C minimum operating temperature
 AEC-Q200 qualied
 Integrated pressure relief
 Insulated case
FEATURES:
 Sub-1mm package height
 Qg down to 7.0nC
 ±20V maximum gate voltage (VGS)
 Optimised low-Rg variants
APPLICATIONS:
 Switched-mode power supplies
 DC/DC converters
APPLICATIONS:
 DC-DC converters for:
 •TelecomandNetcomequipment
 •High-enddesktopPCs
 •Notebookcomputers
Vishay
International
Rectier
Part Number
Package Breakdown voltage
Typ. on-resistance
@ 10V
Typ. Qg @ 4.5V Extra die
feature
IRFHM831 3mm x 3mm 30V 6.6mΩ 7.3nC Low Rg
IRFHM830D 3mm x 3mm 30V 3.4mΩ 13nC FETky
IRFHM830 3mm x 3mm 30V 3.0mΩ 15nC -
IRFH5303 5mm x 6mm 30V 3.6mΩ 15nC Low Rg
IRFH5304 5mm x 6mm 30V 3.8mΩ 16nC -
IRFH5306 5mm x 6mm 30V 6.9mΩ 7.8nC -
IRFH5255 5mm x 6mm 25V 5.0mΩ 7.0nC Low Rg
IRFH5250D 5mm x 6mm 25V 1.0mΩ 39nC FETky
from lower package resistance leading to a
reduction in overall MOSFET on-resistance.
The improved package technology, called
performance PQFN, includes manufacturing
advances that not only improve electrical
characteristics but also increase thermal
conductivity, improve reliability, and enable
sealing to JEDEC Moisture Sensitivity Level
1. The IRFHM83x series uses the 3mm x
3mmperformance PQFN package, while the
IRFH525x and IRFH530x are available in the
larger 5mm x 6mm outline. By conforming to
established dimensions of PQFN packages, all
three series of devices can be used in designs
requiring higher current-handling capability
without an increase in footprint.
Among the enhanced MOSFETs are devices
optimised for use as control MOSFETs, featuring
low gate resistance leading to reduced
switching losses. For synchronous-MOSFET
use, devices are available as a FETky combining
a MOSFET and a Schottky diode in a single
monolithic device. The FETky conguration
reduces the control FET’s reverse-recovery
time, leading to enhanced eciency and EMI
performance in synchronous switched-mode
converters.