Datasheet
DS18S20
20 of 23
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground ........................................................................................ -0.5V to +6.0V
Continuous Power Dissipation (T
A
= +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C) .......................................................................................... 470.6mW
3-Pin TO-92 (derate 6.3mW/°C above +70°C)..................................................................................... 500mW
Operating Temperature Range ................................................................................................................ -55°C to +125°C
Storage Temperature Range .................................................................................................................... -55°C to +125°C
Lead Temperature (soldering, 10s) .......................................................................................................... +260°C
Soldering Temperature (reflow)
Lead(Pb)-free ..................................................................................................................................... .+260°C
Containing lead(Pb) ............................................................................................................................ +240°C
These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(V
DD
= 3.0V to 5.5V, T
A
= -55°C to +125°C, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
NOTES
Supply Voltage
V
DD
Local Power
+3.0
+5.5
V
1
Pullup Supply
Voltage
V
PU
Parasite Power
+3.0
+5.5
V 1, 2
Local Power
+3.0
V
DD
Thermometer Error t
ERR
-10°C to +85°C
±0.5
°C 3
-55°C to +125°C
±2
Input Logic-Low
V
IL
-0.3
+0.8
V
1, 4, 5
Input Logic-High V
IH
Local Power +2.2
The lower of
5.5
or
V
DD
+ 0.3
V 1, 6
Parasite Power +3.0
Sink Current
I
L
V
I/O
= 0.4V
4.0
mA
1
Standby Current
I
DDS
750
1000
nA
7, 8
Active Current
I
DD
V
DD
= 5V
1
1.5
mA
9
DQ Input Current
I
DQ
5
µA
10
Drift
±0.2
°C
11
NOTES:
1) All voltages are referenced to ground.
2) The Pullup Supply Voltage specification assumes that the pullup device is ideal, and therefore the high level of
the pullup is equal to V
PU
. In order to meet the V
IH
spec of the DS18S20, the actual supply rail for the strong
pullup transistor must include margin for the voltage drop across the transistor when it is turned on; thus:
V
PU_ACTUAL
= V
PU_IDEAL
+ V
TRANSISTOR
.
3) See typical performance curve in
Figure 16.
4) Logic-low voltages are specified at a sink current of 4mA.
5) To guarantee a presence pulse under low voltage parasite power conditions, V
ILMAX
may have to be reduced to
as low as 0.5V.
6) Logic-high voltages are specified at a source current of 1mA.
7) Standby current specified up to +70°C. Standby current typically is 3µA at +125°C.
8) To minimize I
DDS
, DQ should be within the following ranges: GND ≤ DQ ≤ GND + 0.3V or
V
DD
– 0.3V ≤ DQ ≤ V
DD
.
9) Active current refers to supply current during active temperature conversions or EEPROM writes.
10) DQ line is high (“high-Z” state).
11) Drift data is based on a 1000-hour stress test at +125°C with V
DD
= 5.5V.