Datasheet

MAX9945
38V, Low-Noise, MOS-Input,
Low-Power Op Amp
_______________________________________________________________________________________ 3
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
R
OUT
= 10kΩ to GND T
A
= T
MIN
to T
MAX
V
EE
+
0.26
V
EE
+
0.45
Output Voltage Low V
OL
R
OUT
= 100kΩ to
GND
T
A
= T
MIN
to T
MAX
V
EE
+
0.05
V
EE
+
0.15
V
R
OUT
= 10kΩ to GND T
A
= T
MIN
to T
MAX
V
CC
-
0.45
V
CC
-
0.24
Output Voltage High V
OH
R
OUT
= 100kΩ to
GND
T
A
= T
MIN
to T
MAX
V
CC
-
0.15
V
CC
-
0.03
V
AC ELECTRICAL CHARACTERISTICS
Input Current-Noise Density I
N
f = 1kHz 1 fA/√Hz
Input Voltage Noise V
NP-P
f = 0.1Hz to 10Hz 2 µV
P-P
f = 100Hz 25
f = 1kHz 16.5
Input Voltage-Noise Density V
N
f = 10kHz 15
nV/√Hz
Gain Bandwidth GBW 3 MHz
Slew Rate SR 2.2 V/µs
Capacitive Loading (Note 4) C
LOAD
No sustained oscillations 120 pF
Total Harmonic Distortion THD
V
OUT
= 4.5V
P-P
, A
V
= 1V/V,
f = 10kHz, R
OUT
= 10kΩ to GND
97 dB
POWER-SUPPLY ELECTRICAL CHARACTERISTICS
Power-Supply Voltage Range V
CC
- V
EE
Guaranteed by PSRR, V
EE
= 0V +4.75 +38 V
Power-Supply Rejection Ratio PSRR V
CC
- V
EE
= +4.75V to +38V 82 100 dB
T
A
= +25°C 400 700
Quiescent Supply Current I
CC
T
A
= T
MIN
to T
MAX
850
µA
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +15V, V
EE
= -15V, V
IN+
= V
IN-
= V
GND
= 0V, R
OUT
= 100kΩ to GND, T
A
= -40°C to +125°C, typical values are at T
A
= +25°C,
unless otherwise noted.) (Note 2)
Note 2: All devices are 100% production tested at T
A
= +25°C. All temperature limits are guaranteed by design.
Note 3: Guaranteed by design. IN+ and IN- are internally connected to the gates of CMOS transistors. CMOS GATE leakage is so
small that it is impractical to test in production. Devices are screened during production testing to eliminate defective units.
Note 4: Specified over all temperatures and process variation by circuit simulation.