Datasheet

MAX9945
38V, Low-Noise, MOS-Input,
Low-Power Op Amp
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
CC
= +15V, V
EE
= -15V, V
IN+
= V
IN-
= V
GND
= 0V, R
OUT
= 100kΩ to GND, T
A
= -40°C to +125°C, typical values are at T
A
= +25°C,
unless otherwise noted.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Supply Voltage (V
CC
to V
EE
) ..................................-0.3V to +40V
IN+, IN-, OUT Voltage......................(V
EE
- 0.3V) to (V
CC
+ 0.3V)
IN+ to IN- .............................................................................±12V
OUT Short Circuit to Ground Duration....................................10s
Continuous Input Current into Any Pin .............................±20mA
Continuous Power Dissipation (T
A
= +70°C)
6-Pin TDFN-EP (derate 23.8mW/°C above +70°C)
Multilayer Board ....................................................1904.8mW
8-Pin µMAX (derate 4.8mW/°C above +70°C)
Multilayer Board ......................................................387.8mW
Operating Temperature Range .........................-40°C to +125°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature ....................................................+260°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
DC ELECTRICAL CHARACTERISTICS
T
A
= +25°C V
EE
V
CC
-
1.2
Input Voltage Range V
IN+
, V
IN-
Guaranteed by
CMRR
T
A
= T
MIN
to T
MAX
V
EE
V
CC
-
1.4
V
T
A
= +25°C ±0.6 ±5
Input Offset Voltage V
OS
T
A
= T
MIN
to T
MAX
±8
mV
Input Offset Voltage Drift V
OS
- T
C
2 µV/°C
-40°C ≤ T
A
≤ +25°C 50 150 fA
-40°C ≤ T
A
≤ +70°C 12 pA
-40°C ≤ T
A
≤ +85°C 55 pA
Input Bias Current (Note 3) I
B
-40°C ≤ T
A
≤ +125°C 1.9 nA
V
CM
= V
EE
to V
CC
- 1.2V,
T
A
= +25°C
78 94
Common-Mode Rejection Ratio CMRR
V
CM
= V
EE
to V
CC
- 1.4V,
T
A
= T
MIN
to T
MAX
78 94
dB
V
EE
+ 0.3V ≤ V
OUT
≤ V
CC
- 0.3V,
R
OUT
= 100kΩ to GND
110 130
Open-Loop Gain A
OL
V
EE
+ 0.75V ≤ V
OUT
≤ V
CC
- 0.75V,
R
OUT
= 10kΩ to GND
110 130
dB
Output Short-Circuit Current I
SC
25 mA
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial
.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TDFN-EP
Junction-to-Ambient Thermal Resistance (θ
JA
) ............42°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ...................9°C/W
µMAX
Junction-to-Ambient Thermal Resistance (θ
JA
) .......206.3°C/W
Junction-to-Case Thermal Resistance θ
JC
...................42°C/W