Datasheet

SGND to PGND .....................................................-0.3V to +0.3V
V
DD
to PGND...........................................................-0.3V to +4V
PV
SS
to SV
SS
.......................................................-0.3V to +0.3V
C1P to PGND.............................................-0.3V to (V
DD
+ 0.3V)
C1N to PGND...........................................(PV
SS
- 0.3V) to +0.3V
PV
SS
, SV
SS
to PGND..............................................+0.3V to -4V
IN_ to SGND.................................(SV
SS
- 0.3V) to (V
DD
+ 0.3V)
SDA, SCL to PGND..................................................-0.3V to +4V
SHDN to PGND..........................................-0.3V to (V
DD
+ 0.3V)
OUT_ to SGND............................................................-3V to +3V
BB_ to SGND...............................................................-2V to +2V
Duration of OUT_ Short Circuit to _GND ....................Continuous
Continuous Current Into/Out of:
V
DD
, C1P, PGND, C1N, PV
SS
, SV
SS
, or OUT_...........±0.85A
Any Other Pin................................................................±20mA
Continuous Power Dissipation (T
A
= +70°C)
4 x 4 UCSP (derate 8.2mW/°C above +70°C) .......... 659.2mW
16-Pin Thin QFN (derate 16.9mW/°C above +70°C)....1349mW
Operating Temperature Range.............................-40°C to +85°C
Junction Temperature.................... ...................... .............+150°C
Storage Temperature Range .............................-65°C to +150°C
Bump Temperature (soldering)
Reflow ..........................................................................+230°C
Lead Temperature (soldering, 10s) ............. .... .. .......... ....+300°C
(V
DD
= SHDN = 3V, PGND = SGND = 0V, C1 = C2 = 1μF, BB_ = 0V. gain = 0dB, maximum volume, BassMax disabled. Load connected
between OUT_ and SGND where specified. T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
GENERAL
Supply Voltage Range V
DD
1.8 3.6 V
Quiescent Supply Current I
DD
No load 4 6.5 mA
Shutdown Supply Current I
DD_SHDN
V
SHDN
= 0V 5 8.5 µA
Turn-On Time t
ON
200 µs
Turn-Off Time t
OFF
35 µs
Thermal Shutdown Threshold T
THRES
+143 °C
Thermal Shutdown Hysteresis T
HYST
12 °C
HEADPHONE AMPLIFIER
Output Offset Voltage V
OS
Measured between
OUT_ and SGND
(Note 2)
Gain = 0dB,
MAX9723A/
MAX9723B
±0.7 ±4.5
mV
Gain = +6dB,
MAX9723C/
MAX9723D
±0.8 ±5
Input Resistance R
IN
All volume levels 10 17 27 kΩ
BBR, BBL Input Bias Current I
BIAS_BB
±10 ±100 nA
Power-Supply Rejection Ratio PSRR (Note 2)
DC, V
DD
= 1.8V to 3.6V 73 90
dB
f = 217Hz, 100mV
P-P
ripple,
V
DD
= 3.0V
87
f = 1kHz, 100mV
P-P
ripple,
V
DD
= 3.0V
86
f = 20kHz, 100mV
P-P
ripple,
V
DD
= 3.0V
61
MAX9723 Stereo DirectDrive Headphone Amplier
with BassMax, Volume Control, and I
2
C
www.maximintegrated.com
Maxim Integrated │ 2
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics