Datasheet

3Maxim Integrated
36V, Precision, Low-Noise,
Wide-Band Amplifier
MAX9632
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 15V, V
EE
= -15V, R
L
= 10kI to V
GND
, V
IN+
= V
IN-
= V
GND
= 0V, V
SHDN
= V
GND
, T
A
= -40NC to +125NC. Typical values are
at T
A
= +25NC, unless otherwise noted.) (Note 2)
Note 2: All devices are 100% production tested at T
A
= +25NC. Temperature limits are guaranteed by design.
Note 3: Guaranteed by design.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Common-Mode Rejection Ratio CMRR
V
EE
+ 1.8V P V
CM
P V
CC
- 1.4V, T
A
= +25NC
120 135
dB
V
EE
+ 1.8V P V
CM
P V
CC
- 1.4V,
-40NC P T
A
P +125NC
110
Large-Signal Gain A
VOL
V
EE
+ 0.2V P V
OUT
P V
CC
- 0.2V, R
L
= 10kI
125 140
dB
V
EE
+ 0.6V P V
OUT
P V
CC
- 0.6V, R
L
= 600I
120 135
Output Voltage Swing
V
OH
V
CC
- V
OUT
R
L
= 10kI
50 150
mV
R
L
= 600I
150 400
V
OL
V
OUT
- V
EE
R
L
= 10kI
50 150
R
L
= 600I
150 400
Short-Circuit Current I
SC
T
A
= +25NC
56 mA
AC SPECIFICATIONS
Gain-Bandwidth Product GBWP 55 MHz
Slew Rate SR
0 P V
OUT
P 5V
30
V/Fs
Settling Time t
S
To 0.0015%, V
OUT
= 10V
P-P
, C
L
= 100pF,
AV = 1V/V
600 ns
Total Harmonic Distortion THD
f = 1kHz, V
OUT
= 3V
RMS,
R
L = 600I, AV
= 1V/V
-136
dB
f = 10kHz, V
OUT
= 3V
RMS,
R
L = 600I, AV
= 1V/V
-128
Input-Voltage Noise Density e
N
f = 1kHz 0.94
nV/√Hz
Input Voltage Noise
0.1Hz P f P 10Hz
65 nV
P-P
Input-Current Noise Density i
N
f = 1kHz 3.75
pA/√Hz
Capacitive Loading C
L
No sustained oscillation, AV = 1V/V 350 pF