Datasheet

2 Maxim Integrated
36V, Precision, Low-Noise,
Wide-Band Amplifier
MAX9632
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
V
CC
to V
EE
............................................................-0.3V to +40V
All Other Pins ..................................(V
EE
- 0.3V) to (V
CC
+ 0.3V)
Short-Circuit (GND) Duration, OUT ....................................... 10s
Continuous Input Current (any pin) ................................. Q20mA
Continuous Power Dissipation (T
A
= +70NC) (Note 1)
Multilayer SO (derate 7.4mW/NC above +70NC) .........588mW
Multilayer TDFN (derate 23.8mW/NC above +70NC) ...1905mW
Multilayer µMAX (derate 4.8mW/NC above +70NC) .. 387.8mW
ESD Protection
HBM
..............................................................................................
8kV
CDM ................................................................................... 1kV
Operating Temperature Range ........................ -40NC to +125NC
Junction Temperature .....................................................+150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
ELECTRICAL CHARACTERISTICS
(V
CC
= 15V, V
EE
= -15V, R
L
= 10kI to V
GND
, V
IN+
= V
IN-
= V
GND
= 0V, V
SHDN
= V
GND
, T
A
= -40NC to +125NC. Typical values are
at T
A
= +25NC, unless otherwise noted.) (Note 2)
ABSOLUTE MAXIMUM RATINGS
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
8 TDFN
Junction-to-Ambient Thermal Resistance (q
JA
) ..........42°C/W
Junction-to-Case Thermal Resistance (q
JC
) .................8°C/W
8 SO
Junction-to-Ambient Thermal Resistance (q
JA
) ........136°C/W
Junction-to-Case Thermal Resistance (q
JC
) ...............38°C/W
8 µMAX
Junction-to-Ambient Thermal Resistance (q
JA
) .....206.3°C/W
Junction-to-Case Thermal Resistance (q
JC
) ...............42°C/W
PACKAGE THERMAL CHARACTERISTICS (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
POWER SUPPLY
Supply Voltage Range V
CC
Guaranteed by PSRR 4.5 36 V
Supply Current I
CC
3.9 6.5 mA
Power-Supply Rejection Ratio PSRR
T
A
= +25NC
125 140
dB
-40NC P T
A
P +125NC
120
SHUTDOWN
Shutdown Input Voltage V
SHDN
Device disabled
V
CC
- 0.35
V
CC
V
Device enabled V
EE
V
CC
- 3.0
Shutdown Current I
SHDN
V
SHDN
= V
CC
1 15
FA
DC SPECIFICATIONS
Input Offset Voltage V
OS
T
A
= +25NC
30 125
FV
-40NC P T
A
P +125NC
165
Input Offset Voltage Drift
QDV
OS
(Note 3) 0.15 0.5
FV/NC
Input Bias Current I
B
30 180 nA
Input Offset Current I
OS
15 100 nA
Input Common-Mode Range V
CM
Guaranteed by CMRR
V
EE
+
1.8
V
CC
-
1.4
V