Datasheet

MAX8903A–E/G/H/J/N/Y
2A 1-Cell Li+ DC-DC Chargers
for USB and Adapter Power
2
Maxim Integrated
ELECTRICAL CHARACTERISTICS
(V
DC
= V
USB
= 5V, V
BAT
= 4V, circuit of Figure 2, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.)
(Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PARAMETER CONDITIONS MIN TYP MAX UNITS
DC INPUT
DC Operating Range 4.15 16 V
No valid USB input 3.9 4.0 4.1
DC Undervoltage Threshold
When V
DOK
goes low, V
DC
rising, 500mV typical hysteresis
Valid USB input 4.0 4.3 4.4
V
DC Overvoltage Threshold
When V
DOK
goes high, V
DC
rising, 500mV typical
hysteresis
16.5 17 17.5 V
Charger enabled, no switching, V
SYS
= 5V 2.3 4
Charger enabled, f = 3MHz, V
DC
= 5V 15
C har g er enab l ed , V
C E N
= 0V , 100m A U S B m od e ( N ote 2) 1 2
C har g er enab l ed , V
C E N
= 5V , 100m A U S B m od e ( N ote 2) 1 2
DC Supply Current
V
DCM
= 0V, V
USUS
= 5V 0.10 0.25
mA
DC High-Side Resistance 0.15 Ω
DC Low-Side Resistance 0.15 Ω
DC-to-BAT Dropout Resistance Assumes a 40mΩ inductor resistance (R
L
) 0.31 Ω
DC-to-BAT Dropout Voltage
When SYS regulation and charging stops, V
DC
falling,
200mV hysteresis
01530mV
Minimum Off Time (t
OFFMIN
) 100 ns
Minimum On Time (t
ONMIN
) 70 ns
V
DC
= 8V, V
BAT
= 4V 4
MAX8903A/B/C/D/E/H/J/Y
V
DC
= 5V, V
BAT
= 3V 3
V
DC
= 9V, V
BAT
= 4V 1
Switching Frequency (f
SW
)
MAX8903G
V
DC
= 9V, V
BAT
= 3V 1
MHz
DC Step-Down Output Current-
Limit Step Range
0.5 2 A
R
IDC
= 3kΩ 1900 2000 2100
R
IDC
= 6kΩ 950 1000 1050
DC Step-Down Output Current
Limit (I
SDLIM
)
V
DC
= 6V, V
SYS
= 4V
R
IDC
= 12kΩ 450 500 550
mA
ABSOLUTE MAXIMUM RATINGS
DC, LX to GND .......................................................-0.3V to +20V
DCM to GND ..............................................-0.3V to (V
DC
+ 0.3V)
DC to SYS .................................................................-6V to +20V
BST to GND ...........................................................-0.3V to +26V
BST TO LX ................................................................-0.3V to +6V
USB to GND .............................................................-0.3V to +9V
USB to SYS..................................................................-6V to +9V
VL to GND ................................................................-0.3V to +6V
THM, IDC, ISET, CT to GND........................-0.3V to (V
VL
+ 0.3V)
DOK, FLT, CEN, UOK, CHG, USUS,
BAT, SYS, IUSB, CS to GND ................................-0.3V to +6V
SYS to BAT ...............................................................-0.3V to +6V
PG, EP (exposed pad) to GND .............................-0.3V to +0.3V
DC Continuous Current (total in two pins)......................2.4A
RMS
USB Continuous Current.......................................................1.6A
LX Continuous Current (total in two pins).......................2.4A
RMS
CS Continuous Current (total in two pins) ......................2.4A
RMS
SYS Continuous Current (total in two pins) .......................3A
RMS
BAT Continuous Current (total in two pins) .......................3A
RMS
VL Short Circuit to GND .............................................Continuous
Continuous Power Dissipation (T
A
= +70°C)
28-Pin Thin QFN-EP
Multilayer (derate 28.6mW/°C above +70°C) ..........2286mW
28-Pin Thin QFN-EP
Single-Layer (derate 20.8mW/°C above +70°C)...1666.7mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature Range ............................-40°C to +150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C