Datasheet

MAX8660/MAX8660A/MAX8660B/MAX8661
High-Efficiency, Low-I
Q
, PMICs with Dynamic
Voltage Management for Mobile Applications
9
ELECTRICAL CHARACTERISTICS (continued)
(V
IN
= V
IN5
= V
IN67
= V
IN8
= 3.6V, Figure 3, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
LBO, RSO Output-High Leakage
Current
V
IN
= 6V, T
A
= +25°C 0.2 µA
2.6V ≤ V
IN
≤ 6V, sinking 3mA 0.2
LBO Output Low Level
V
IN
= 1V, sinking 100µA 0.4
V
Minimum V
IN
for LBO Assertion
LBO is forced low when the device is in
UVLO
1V
LBO Deassert Delay t
VBHBFH
Figure 6 0 3 µs
T
A
= +25°C -50 0 +50
LBF and LBR Input Bias Current
T
A
= +85°C 0.5
nA
RESET (MR, RSO)
RSO Threshold V
RSOTH
Voltage on V8, falling, hysteresis is 5% (typ) 2.1 2.2 2.3 V
RSO Deassert Delay t
VBHRSTH
Figure 6 20 24 28 ms
RSO Output-High Leakage
Current
V
IN
= 6V, T
A
= +25°C 0.2 µA
2.6V ≤ V
IN
≤ 6V, sinking 3mA 0.2
RSO Output Low Level
V
IN
= 1V, sinking 100µA 0.4
V
Minimum V
IN
for RSO Assertion
RSO is forced low when the device is in
UVLO
1V
MR Input High Level 2.6V ≤ V
IN
≤ 6V 1.4 V
MR Input Low Level 2.6V ≤ V
IN
≤ 6V 0.4 V
MR Input Leakage Current V
IN
= 6V, T
A
= +25°C -0.2 +0.2 µA
MR Minimum Pulse Width t
MR
1µs
THERMAL-OVERLOAD PROTECTION
Thermal-Shutdown Temperature T
J
rising +160 °C
Thermal-Shutdown Hysteresis 15 °C
ENABLE INPUTS (EN1, EN2, EN34, EN5)
EN_ Input High Level 2.6V ≤ V
IN
≤ 6V 1.4 V
EN_ Input Low Level 2.6V ≤ V
IN
≤ 6V 0.4 V
EN_ Input Leakage Current V
IN
= 6V, T
A
= +25°C -0.2 +0.2 µA
I
2
C LOGIC (SDA, SCL, SRAD)
SCL, SDA Input High Voltage 1.4 V
SCL, SDA Input Low Voltage 0.4 V
SCL, SDA Input Hysteresis 0.1 V
SCL, SDA Input Current T
A
= +25°C, IN = AGND, V
IN
= 6V -10 +10 µA
SDA Output Low Voltage 2.6V ≤ V
IN
≤ 6V, sinking 3mA 0.2 V
SRAD Input High Level 2.6V ≤ V
IN
≤ 6V 1.4 V
SRAD Input Low Level 2.6V ≤ V
IN
≤ 6V 0.4 V
SRAD Input Leakage Current V
IN
= 6V, T
A
= +25
o
C -0.2 +0.2 µA