Datasheet

MAX8520/MAX8521
Smallest TEC Power Drivers for Optical
Modules
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
PVDD1
= V
PVDD2
= V
SHDN
= 5V, 1MHz mode (Note 4). PGND1 = PGND2 = GND, CTLI = MAXV = MAXIP = MAXIN = REF,
T
A
= 0°C to +85°C, unless otherwise noted. Typical values at T
A
= +25°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
500kHz mode 11 14
V
COMP
= V
REF
=
1.500V, V
DD
= 5V
1MHz mode 16 21
500kHz mode 8 11
No-Load Supply Current
I
DD(NO
LOAD)
V
COMP
= V
REF
=
1.500V, V
DD
= 3.3V
1MHz mode 11 14
mA
Shutdown Supply Current I
DD-SD
SHDN = GND, V
DD
= 5V, (Note 5) 2 3 mA
Thermal Shutdown T
SHUTDOWN
Hysteresis = 15°C +165 °C
V
DD
rising 2.50 2.65 2.80
UVLO Threshold V
UVLO
V
DD
falling 2.40 2.55 2.70
V
MAX8521, FREQ = V
DD
, V
DD
= 3V to 5V 0.8 1.0 1.2
MAX8521, FREQ = GND, V
DD
= 3V to 5V 0.4 0.5 0.6
MAX8520, R
EXT
= 60k, V
DD
= 5V 0.8 1.0 1.2
MAX8520, R
EXT
= 60k, V
DD
= 3V 0.76 0.93 1.10
MAX8520, R
EXT
= 150k, V
DD
= 5V 0.4 0.5 0.6
Internal Oscillator Switching
Frequency
f
SW-INT
MAX8520, R
EXT
= 150k, V
DD
= 3V 0.36 0.46 0.56
MHz
External Sync Frequency Range 25% < duty cycle < 75% (MAX8521 only) 0.7 1.2 MHz
LX_ Duty Cycle (Note 6) 0 100 %
OS1, OS2, CS Input Current
I
OS1
, I
OS2
,
I
CS
0V or V
DD
-100 +100 µA
SHDN, FREQ Input Current
I
SHDN
,
I
FREQ
0V or V
DD
, FREQ applicable for the
MAX8521 only
-5 +5 µA
SHDN, FREQ Input Low Voltage V
IL
V
DD
= 3V to 5.5V, FREQ applicable for the
MAX8521 only
V
DD
x
0.25
V
SHDN, FREQ Input High Voltage V
IH
V
DD
= 3V to 5.5V, FREQ applicable for the
MAX8521 only
V
DD
x
0.75
V
V
MAXV
= V
REF
x 0.67, V
OS1
to V
OS2
= ±4V,
V
DD
= 5V
-2 +2 %
MAXV Threshold Accuracy
V
MAXV
= V
REF
x 0.33, V
OS1
to V
OS2
= ±2V,
V
DD
= 3V
-3 +3 %
MAXV, MAXI_ Input Bias Current
I
MAXV-BIAS
,
I
MAXI_-BIAS
V
MAXV
= V
MAXI_
= 0.1V or 1.5V -0.1 +0.1 µA
CTLI Gain A
CTLI
V
CTLI
= 0.5V to 2.5V (Note 7) 9.5 10.0 10.5 V/V
CTLI Input Resistance R
CTLI
1M terminated at REF 0.5 1.0 2.0 M
Error-Amp Transconductance g
m
50 100 160 µS
V
ITEC
Accuracy
V
OS1
to V
CS
= ±100mV
V
OS1
= V
DD
/2
-10 +10 %