Datasheet

MAX5986A–MAX5986C/MAX5987A
IEEE 802.3af-Compliant, High-Efficiency, Class 1/
Class 2, PDs with Integrated DC-DC Converter
2Maxim Integrated
Junction-to-Ambient Thermal Resistance (q
JA
) ..............35°C/W
Junction-to-Case Thermal Resistance (q
JC
) ..................2.7°C/W
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 2)
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
(All voltages referenced to GND, unless otherwise noted.)
V
DD
to GND ...........................................................-0.3V to +70V
(100V, 100ms, R
TEST
= 3.3kω) (Note 1)
V
CC
, WAD, RREF to GND ........................ -0.3V to (V
DD
+ 0.3V)
AUX, LDO_IN, LED to GND .................................... -0.3V to 16V
LDO_OUT to GND .............................. -0.3V to (LDO_IN + 0.3V)
LDO_FB to GND ...................................................... -0.3V to +6V
LX to GND ................................................ -0.3V to (V
CC
+ 0.3V)
LDO_OUT, VDRV, FB, RESET, WK, SL, ULP, MPS, CLASS2
to GND .............................................................. -0.3V to +6V
VDRV to V
DD
............................................ -0.3V to (V
DD
+ 0.3V)
PGND to GND ......................................................-0.3V to +0.3V
LX Total RMS Current ...........................................................1.6A
Continuous Power Dissipation (T
A
= + 70NC)
TQFN (derate 28.6mW/NC above +70NC) ..............2285.7mW
Operating Temperature Range .......................... -40NC to +85NC
Junction Temperature .....................................................+150NC
Storage Temperature Range ............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
Note 1: See Figure 1, Test Circuit.
ELECTRICAL CHARACTERISTICS
(V
DD
= 48V, R
SIG
= 24.9kω, LED, V
CC
, SL, ULP, WK, RESET, LDO_OUT unconnected, WAD = LDO_EN = LDO_IN = PGND = GND,
C1 = 68nF, C2 = 10µF, C3 = 1µF (see Figure 3), V
FB
= V
AUX
= 0V, LX unconnected. V
CLASS2
= 0V, V
MPS
= 0V. All voltages are
referenced to GND, unless otherwise noted. T
A
= T
J
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.)
(Note 3)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
POWER DEVICE (PD) INTERFACE
DETECTION MODE
Input Offset Current I
OFFSET
V
VDD
= 1.4V to 10.1V (Note 4) 10 FA
Effective Differential Input
Resistance
dR
V
VDD
= 1.4V to 10.1V with 1V step,
(Note 5)
23.95 25.5 kI
CLASSIFICATION MODE
Classification Enable Threshold V
TH,CLS,EN
V
DD
rising 10.2 11.5 12.5 V
Classification Disable Threshold V
TH,CLS,DIS
V
DD
rising 22 23 23.8 V
Classification Stability Time 2 ms
Classification Current I
CLASS
V
DD
= 12.6V
to 20V
CLASS2 = GND 9.12 10.5 11.88
mA
CLASS2 = VDRV 16.1 18 20.9
POWER MODE
V
DD
Supply Voltage Range V
DD
60 V
V
DD
Supply Current I
DD
V
DD
= 60V
MAX5986A/B/
MAX5987A
3.6 4.5
mA
MAX5986C 4.8 6.6