Datasheet

MAX5976A/MAX5976B
2.7V to 18V, 7A, Hot-Swap Solution
2
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
IN to GND ..............................................................-0.3V to +20V
CB to GND ..............................................-0.3V to (V
REG
+ 0.3V)
ON1, REG to GND ..................................................-0.3V to +6V
OUT, ON2, PRESDET
to GND ............... -0.3V to the lower of (V
IN
+ 0.3V) and +20V
PG, FAULT to GND ...............................................-0.3V to +26V
Continuous Power Dissipation (T
A
= +70NC)
TQFN (derate 33.3mW/NC above +70NC) (Note 1) ..2666.7mW
Operating Ambient Temperature Range ........... -40NC to +85NC
Maximum Junction Temperature .....................................+150NC
Storage Temperature Range ............................ -60NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
ELECTRICAL CHARACTERISTICS
(V
IN
= 12V, V
ON1
= 2V, V
ON2
= V
PRESDET
= 0V, R
CB
= 40kI, T
A
= T
J
= -40NC to +85NC, unless otherwise noted. Typical values are
at T
A
= +25NC.) (Note 3)
ABSOLUTE MAXIMUM RATINGS
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
TQFN
Junction-to-Case Thermal Resistance (B
JC
) ...................30NC/W
Junction-to-Ambient Thermal Resistance (B
JA
) ..................2NC/W
PACKAGE THERMAL CHARACTERISTICS (Note 2)
Note 1: As per JEDEC51 standard (multilayer board).
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Supply Voltage Range V
IN
2.7 18 V
Input Supply Current I
IN
V
ON1
= 3V, no load, 7A current-limit
threshold
5 7.5 mA
Default Undervoltage Lockout V
UVLO
V
IN
rising, V
ON1
= V
IN
2.35 2.5 2.65 V
Default Undervoltage Lockout
Hysteresis
V
UVLO_HYS
0.1 V
ON1 Turn-On Threshold V
ON1_TH
V
ON1
rising 1.17 1.21 1.25 V
ON1 Turn-On Threshold
Hysteresis
V
ON1_HYS
V
ON1
falling 0.1 V
ON1 Input Bias Current I
ON1
V
ON1
= 0 to 5V -1 +1 FA
CURRENT LIMIT
Circuit-Breaker Accuracy
(At Startup)
I
CB,TH
R
CB
= 40kI 6.3 7 7.7
A
R
CB
= 28.57kI 4.5 5 5.5
R
CB
= 20kI 3.15 3.5 3.85
R
CB
= 10kI 1.575 1.75 1.925
Slow-Comparator Response
Time (Note 4)
t
SCD
0.6% overcurrent 2.7 ms
30% overcurrent 200 Fs
MOSFET
Total On-Resistance R
ON
15 24 41 mI
LOGIC INPUTS (ON2, PRESDET)
Low Voltage Input V
IL
2.7V < V
IN
< 18V 0.4 V
High Voltage Input V
IH
2.7V < V
IN
< 18V 1.4 V
Input Current I
IN
V
ON2
, V
PRESDET
= 0 to 6V -1 +1 FA