Datasheet

MAX5938
-48V Hot-Swap Controller with V
IN
Step Immunity,
No R
SENSE
, and Overvoltage Protection
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
V
EE
, V
OUT
, PGOOD, LP,
STEP_MON to GND............................................+0.3V to -85V
PGOOD to V
OUT
.....................................................-0.3V to +85V
V
OUT
, LP, STEP_MON to V
EE
.................................-0.3V to +85V
GATE to V
EE
...........................................................-0.3V to +20V
ON, OFF, OV, POL_SEL, CB_ADJ to V
EE
................-0.3V to +6V
Input Current
LP (internally duty-cycle limited)..........................................1A
PGOOD (continuous) ......................................................80mA
GATE (during 15V clamp, continuous) ...........................30mA
GATE (during 2V clamp, continuous) .............................50mA
GATE (during gate pulldown, continuous)......................50mA
Continuous Power Dissipation (T
A
= +70°C)
16-Pin QSOP (derate 8.3mW/°C above +70°C)...........667mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature .....................................................+150°C
Storage Temperature Range ............................-65°C to +150°C
Lead Temperature (soldering, 10s) ................................+300°C
ELECTRICAL CHARACTERISTICS
(V
EE
= -10V to -80V, V
IN
= (GND - V
EE
), V
STEP_MON
=V
EE
, R
LP
= 200Ω, V
ON
= V
OFF
= 2V, V
OV
= V
CB_ADJ
= V
EE
, POL_SEL open, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
EE
= -48V, T
A
= +25°C.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
UNITS
Operating Voltage Range V
EE
Referenced to GND -80 -10 V
Operating Supply Current I
CC
0.95
1.4 mA
ON/OFF, OV
ON Reference Threshold Rising
V
ON_REF
,
R
V
ON
increasing
1.219 1.25 1.281
V
ON Reference Threshold Falling
V
ON_REF
,
F
V
ON
decreasing
1.069 1.125 1.181
V
ON Glitch Rejection (Note 3) t
REJ
V
ON
decreasing
0.80
1.5
2.25
ms
OFF Reference Threshold
V
OFF_REF
1.219 1.25 1.281
V
ON/OFF/OV Input Bias Current I
BIAS
-25
+25
nA
OV Reference Threshold, Rising
V
OV_REF
,
R
V
OV
increasing
1.219 1.25 1.281
V
OV Reference Threshold, Falling
V
OV_REF
,
F
V
OV
decreasing
1.069 1.125 1.181
V
OV Transient Rejection t
OVREJ
OV increasing
0.80
1.5
2.25
ms
Power-Up Delay (Note 4) t
ONDLY
80
220 380
ms
V
OUT
to V
EE
Leakage Current
V
OFF
= V
EE
= -80V, V
OUT
= GND,
PGOOD open
0.01
1µA
LP to V
EE
Leakage Current V
OFF
= V
EE
= -80V, LP = GND
0.01
1µA
POL_SEL to V
EE
Input Current POL_SEL = V
EE
-50 -34 -20 µA
GATE DRIVE
V
IN
= 10V 6.5 6.8 7.2
External Gate-Drive Voltage V
GS
V
GATE
- V
EE
14V < V
IN
< 80V 8.1 10
12.8
V
I
CLAMP
= 9mA
13.5
16
MOSFET fully
enhanced
I
CLAMP
= 20mA 17
19.5
I
CLAMP
= 1mA 2.1
2.55
GATE to V
EE
Clamp Voltage
Power-off,
V
EE
= GND
I
CLAMP
= 10mA 2.5
2.93
V
Open-Loop Gate Charge Current
I
G,ON
V
GATE
= V
EE
, V
OUT
= GND -66 -52 -35 µA
V
IN
> 10V 9.0
14.1
GATE Pulldown Switch
On-Resistance
R
G,OFF
V
GATE
- V
EE
=
500mV
V
IN
> 14V 7.5
12.5
mA
Output-Voltage Slew Rate SR l dV
OUT
/dt l, C
SLEW
= 0 2.4 9.0
14.8
V/ms