Datasheet

MAX5889
12-Bit, 600Msps, High-Dynamic-Performance
DAC with LVDS Inputs
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(AV
DD3.3
= DV
DD3.3
= AV
CLK
= 3.3V, AV
DD1.8
= DV
DD1.8
= 1.8V, external reference V
REFIO
= 1.2V, output load 50Ω double-terminat-
ed, transformer-coupled output, I
OUT
= 20mA, T
A
= -40°C to +85°C, unless otherwise noted. Specifications at T
A
≥ +25°C are guar-
anteed by production testing. Specifications at T
A
< +25°C are guaranteed by design and characterization. Typical values are at T
A
= +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
f
OUT
= 16MHz 88
f
CLK
= 200MHz,
0dBFS
f
OUT
= 30MHz 85
f
OUT
= 16MHz 78
f
CLK
= 200MHz,
-12dBFS
f
OUT
= 30MHz 77
f
OUT
= 16MHz 76 81
f
OUT
= 30MHz 80
f
OUT
= 130MHz 71
Spurious-Free
Dynamic Range to
Nyquist
SFDR
f
CLK
= 500MHz,
0dBFS
f
OUT
= 200MHz 54
dBc
f
CLK
= 500MHz
f
OUT1
= 29MHz,
f
OUT2
= 30MHz,
-6.5dBFS per tone
-95
Two-Tone IMD TTIMD
f
CLK
= 500MHz
f
OUT1
= 129MHz,
f
OUT2
= 130MHz,
-6.5dBFS per tone
-70
dBc
f
CLK
= 491.52MHz,
f
OUT
= 30.72MHz
80
WCDMA single
carrier
f
CLK
= 491.52MHz,
f
OUT
= 122.88MHz
72
f
CLK
= 491.52MHz,
f
OUT
= 30.72MHz
72
Adjacent Channel
Leakage Power Ratio
ACLR
WCDMA four carriers
f
CLK
= 491.52MHz,
f
OUT
= 122.88MHz
67
dB
Output Bandwidth
BW
-1dB
(Note 2)
1000 MHz
REFERENCE
Internal Reference Voltage Range
V
REFIO
1.14
1.2
1.26
V
Reference Input Voltage Range
V
REFIOCR
Using external reference
0.10
1.2
1.32
V
Reference Input Resistance R
REFIO
10 kΩ
Reference Voltage Temperature
Drift
TCO
REF
±30 ppm/°C
ANALOG OUTPUT TIMING (Figure 3)
Output Fall Time t
FALL
90% to 10% (Note 3) 0.4 ns
Output Rise Time t
RISE
10% to 90% (Note 3) 0.4 ns
Output Propagation Delay t
PD
Reference to data latency (Note 3) 2.5 ns
Output Settling Time To 0.025% of the final value (Note 3) 11 ns