Datasheet

MAX5723/MAX5724/MAX5725
Ultra-Small, Octal-Channel, 8-/10-/12-Bit Buffered
Output DACs with Internal Reference and SPI Interface
2Maxim Integrated
V
DD,
V
DDIO
to GND ................................................-0.3V to +6V
OUT_, REF to GND
....0.3V to the lower of (V
DD
+ 0.3V) and +6V
SCLK, CSB, IRQ, M/Z, LDAC, CLR to GND
........... -0.3V to +6V
DIN, DOUT to GND
.....................................-0.3V to the lower of
(V
DDIO
+ 0.3V) and +6V
Continuous Power Dissipation (T
A
= +70NC)
TSSOP (derate at 13.6mW/NC above 70NC)
.............. 1084mW
WLP (derate at 21.3mW/NC above 70NC)
.................. 1700mW
Maximum Continuous Current into Any Pin
.................... Q50mA
Operating Temperature
.................................... -40NC to +125NC
Storage Temperature
....................................... -65NC to +150NC
Lead Temperature (TSSOP only)(soldering, 10s)
...........+300NC
Soldering Temperature (reflow)
.................................... +260NC
TSSOP
Junction-to-Ambient Thermal Resistance (θ
JA
) ......73.8NC/W
Junction-to-Case Thermal Resistance (θ
JC
) ..............20NC/W
WLP
Junction-to-Ambient Thermal Resistance (θ
JA
)
(Note 2)
...................................................................47NC/W
ABSOLUTE MAXIMUM RATINGS
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Note 2: Visit www.maximintegrated.com/app-notes/index.mvp/id/1891 for information about the thermal performance of WLP packaging.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
ELECTRICAL CHARACTERISTICS
(V
DD
= 2.7V to 5.5V, V
DDIO
= 1.8V to 5.5V, V
GND
= 0V, C
L
= 200pF, R
L
= 2kI, T
A
= -40NC to +125NC, unless otherwise noted.)
(Note 3)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
DC PERFORMANCE (Note 4)
Resolution and Monotonicity N
MAX5723 8
BitsMAX5724 10
MAX5725 12
Integral Nonlinearity (Note 5) INL
MAX5723 -0.25 Q0.05 +0.25
LSB
MAX5724 -0.5 Q0.2 +0.5
MAX5725 -1 Q0.5 +1
Differential Nonlinearity (Note 5) DNL
MAX5723 -0.25 Q0.05 +0.25
LSB
MAX5724 -0.5 Q0.1 +0.5
MAX5725 -1 Q0.2 +1
Offset Error (Note 6) OE -5 Q0.5 +5 mV
Offset Error Drift Q10 FV/NC
Gain Error (Note 6) GE -1.0 Q0.1 +1.0 %FS
Gain Temperature Coefficient With respect to V
REF
Q3.0
ppm of
FS/NC