Datasheet

2Maxim Integrated
MAX5713/MAX5714/MAX5715
Ultra-Small, Quad-Channel, 8-/10-/12-Bit Buffered
Output DACs with Internal Reference and SPI Interface
V
DD,
V
DDIO
to GND ................................................ -0.3V to +6V
OUT_, REF to GND ................................. ....-0.3V to the lower of
(V
DD
+ 0.3V) and +6V
CSB, SCLK, LDAC, CLR to GND ............................ -0.3V to +6V
DIN, RDY to GND ........................................-0.3V to the lower of
(V
DDIO
+ 0.3V) and +6V
Continuous Power Dissipation (T
A
= +70NC)
TSSOP (derate at 10mW/NC above 70NC) ................... 797mW
WLP (derate at 16.1mW/NC above 70NC) .................. 1288mW
Maximum Continuous Current into Any Pin .................... Q50mA
Operating Temperature Range ........................ -40NC to +125NC
Storage Temperature Range ............................ -65NC to +150NC
Lead Temperature (TSSOP only)(soldering, 10s) ...........+300NC
Soldering Temperature (reflow) .................................... +260NC
TSSOP
Junction-to-Ambient Thermal Resistance (θ
JA
) .......100NC/W
Junction-to-Case Thermal Resistance (θ
JC
) ...............30NC/W
WLP
Junction-to-Ambient Thermal Resistance (θ
JA
)
(Note 2) ........................................................................62NC/W
ABSOLUTE MAXIMUM RATINGS
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Note 2: Visit www.maximintegrated.com/app-notes/index.mvp/id/1891 for information about the thermal performance of WLP packaging.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
ELECTRICAL CHARACTERISTICS
(V
DD
= 2.7V to 5.5V, V
DDIO
= 1.8V to 5.5V, V
GND
= 0V, C
L
= 200pF, R
L
= 2kI, T
A
= -40NC to +125NC, unless otherwise noted. Typical
values are at T
A
= +25NC.) (Note 3)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
DC PERFORMANCE (Note 4)
Resolution and Monotonicity N
MAX5713 8
BitsMAX5714 10
MAX5715 12
Integral Nonlinearity (Note 5) INL
MAX5713 -0.25 Q0.05 +0.25
LSBMAX5714 -0.5 Q0.25 +0.5
MAX5715 -1 Q0. 5 +1
Differential Nonlinearity (Note 5) DNL
MAX5713 -0.25 Q0.05 +0.25
LSBMAX5714 -0.5 Q0.1 +0.5
MAX5715 -1 Q0.2 +1
Offset Error (Note 6) OE -5 Q0.5 +5 mV
Offset Error Drift Q10 FV/NC
Gain Error (Note 6) GE -1.0 Q0.1 +1.0 %FS
Gain Temperature Coefficient With respect to V
REF
Q3.0
ppm of
FS/NC
Zero-Scale Error 0 10 mV
Full-Scale Error With respect to V
REF
-0.5 +0.5 %FS