Datasheet

MAX4959/MAX4960
High-Voltage OVP with Battery Switchover
2
Maxim Integrated
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
IN
= +19V, T
A
= -40°C to +85°C, unless otherwise noted, C
VDD
= 100nF. Typical values are at T
A
= +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
IN, SOURCE1, GATE1, GATE2, to GND ................-0.3V to +30V
V
DD
to GND..............................................................-0.3V to +6V
UVS, OVS, CB to GND .............................................-0.3V to +6V
Continuous Power Dissipation (T
A
= +70°C)
10-pin µDFN (derate 5.0mW/°C above +70°C) ...........403mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
IN
Input Voltage Range V
IN
428V
Overvoltage Adjustable Trip
Range
OVLO (Note 2) 6 28 V
Overvoltage Comp Reference OV
REF
V
IN
rising edge 1.18 1.228 1.276 V
OVS Input Leakage Current OVI
LKG
-100 +100 nA
Overvoltage Trip Hysteresis OV
HYS
1%
Undervoltage Adjustable Trip
Range
UVLO (Note 2) 5 28 V
Undervoltage Comp Reference UV
REF
V
IN
falling edge 1.18 1.228 1.276 V
UVS Input Leakage Current UVI
LKG
-100 +100 nA
Undervoltage Trip Hysteresis UV
HYS
1%
Internal Undervoltage Trip Level INTUV
REF
V
IN
falling edge 4.1 4.4 4.7 V
Internal Undervoltage Trip
Hysteresis
INTUV
HYS
1%
Power-On Trip Level POTL V
DD
> +3V, IN rising edge 0.5 0.75 1 V
Power-On Trip Hysteresis POTL
HYS
10 %
IN Supply Current I
IN
V
IN
= +19V, V
OVS
< OV
REF
and
V
UVS
> UV
REF
100 300 µA
V
DD
V
DD
Voltage Range V
DD
2.7 5.5 V
V
DD
Undervoltage Lockout V
DDUVLO
V
DD
falling edge 1.55 2.40 V
V
DD
Undervoltage Lockout
Hysteresis
V
D D UV LOHY S
50 mV
V
DD
Supply Current I
VDD
V
DD
= +5V, V
IN
= 0V 10 µA
GATE_
GATE1 Open-Drain MOS R
ON
Resistance
R
ON
V
CB
= 0V, V
IN
= 19V, V
OVS
< OV
REF
and
V
UVS
> UV
REF
, I
GATE_
= 0.5mA (MAX4959)
1kΩ
GATE2 Open-Drain MOS R
ON
Resistance
R
ON
V
CB
= 3V, I
GATE_
= 0.5mA 1 kΩ