Datasheet

High-/Full-Speed USB 2.0 Switches
with High ESD
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V+ = +2.7V to +3.6V, T
A
= T
MIN
to T
MAX
, charge-pump enabled, unless otherwise noted. Typical values are at V+= 3.3V, T
A
=
+25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Signals on IN, QP exceeding GND are clamped by internal diodes. Limit forward-diode current to maximum current rating.
(All voltages referenced to GND.)
V+ .............................................................................-0.3V to +4V
IN, QP (Note 1) .........................................................-0.3V to +4V
COM_, NO_, NC_ ..................................................-0.3V to +5.5V
Continuous Current (COM_ to NO_/NC_) ......................±120mA
Peak Current, (COM_ to NO_/NC_)
(pulsed at 1ms 10% duty cycle).................................±240mA
Continuous Power Dissipation (T
A
= +70°C)
10-Pin µDFN (derate 5.0mW/°C above +70°C) ...........403mW
Operating Temperature Range ..........................-40°C to +85°C
Junction Temperature .....................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
MAX4906EF
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
ANALOG SWITCH
Analog Signal Range
V
COM
_,V
NO_
,
V
NC _
QP = GND or V+ (Note 3) 0 3.6 V
Fault-Protection Trip Threshold
(Note 4)
V
FP
3.62 3.9 4.20 V
T
A
= +25°C 3.8 5
V+ = 2.7V,
I
COM_
= -10mA,
V
COM_
= 0V, 1.5V,
QP = GND
T
A
= T
MIN
to T
MAX
6
Ω
T
A
= +25°C 4 7
On-Resistance, Charge-Pump
Enabled
R
ON
V+ = 2.7V,
I
COM_
= -10mA,
V
COM_
= 2.7V,
QP = GND
T
A
= T
MIN
to T
MAX
8
Ω
T
A
= +25°C 5 12
V+ = 3.0V,
I
COM_
= -10mA,
V
COM_
= 0V, 1.5V,
QP = V+
T
A
= T
MIN
to T
MAX
13
T
A
= +25°C 8 15
On-Resistance, Charge-Pump
Disabled
R
ON
V+=2.7V,
I
COM_
= -10mA,
V
COM_
= 0V, 1.5V,
QP = V+
T
A
= T
MIN
to T
MAX
17
Ω
T
A
= +25°C 0.5 0.8
On-Resistance Match Between
Channels
ΔR
ON
V+ = 2.7V,
I
COM_
= -10mA,
V
COM_
= 0V, 1.5V, 2.7V
(Note 5)
T
A
= T
MIN
to T
MAX
1.0
Ω
On-Resistance Flatness R
FLAT
(
ON
)
V+ = 2.7V,
I
COM_
= -10mA, V
COM_
= 0V, 1.5V
(Note 6)
0.5 Ω