Datasheet

MAX4704
Low-Voltage, 60 Ω ,
4:1 Analog Multiplexer in QFN
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS—Single +3V Supply
(V+ = +2.7V to +3.3V, V
IH
= +1.4V, V
IL
= +0.5V, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V+ = +3V and
T
A
= +25°C.) (Notes 2, 3)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Signals on INH, ADD_, NO_, and COM exceeding V+ or GND are clamped by internal diodes. Limit forward-diode current to
maximum current rating.
(Voltages Referenced to GND)
V+ .............................................................................-0.3V to +6V
All Other Pins (Note 1)................................ -0.3V to (V+ + 0.3V)
Continuous Current COM, NO_ ........................................±20mA
Peak Current COM, NO_
(pulsed at 1ms, 10% duty cycle)..................................±40mA
ESD per Method 3015.7.......................................................>2kV
Continuous Power Dissipation (T
A
= +70°C)
10-Pin µMAX (derate 4.7mW/°C above +70°C) ......... 330mW
12-Pin QFN (derate 11.9mW/°C above +70°C) ......... 952mW
Operating Temperature Range .......................... -40°C to +85°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................ +300°C
PARAMETER
SYMBOL
CONDITIONS T
A
MIN TYP MAX UNITS
ANALOG SWITCH
Analog Signal Range
V
COM
, V
NO_
0
V+
V
+25°C5060
On-Resistance R
ON
V+ = +2.7V, I
COM
= 5mA,
V
NO_
= +1.3V
T
MIN
to T
MAX
70
Ω
+25°C13
On-Resistance Match
Between Channels (Note 4)
ΔR
ON
V+ = +2.7V, I
COM
= 5mA,
V
NO_
= +1.3V
T
MIN
to T
MAX
5
Ω
+25°C35
On-Resistance Flatness
(Note 5)
R
FLAT
(
ON
)
V+ = +2.7V, I
COM
= 5mA,
V
NO_
= +1V, +1.3V, +1.8V
T
MIN
to T
MAX
10
Ω
+25°C
-0.1 ±0.01 0.1
NO_ Off-Leakage
Current (Note 6)
I
N O_
(
OFF
)
V+ = +3.3V, V
COM
= +0.3V, +3V
V
NO_
= +3V, +0.3V
T
MIN
to T
MAX
-1
1
nA
+25°C
-0.5 ±0.01 0.5
COM On-Leakage Current
(Note 6)
I
C OM
(
ON
)
V + = + 3.3V , V
C OM
= + 0.3V , +3V
V
N O_
= + 0.3V , + 3V , or fl oati ng
T
MIN
to T
MAX
-5
5
nA
+25°C
-0.5 ±0.01 0.5
COM Off-Leakage Current
(Note 6)
I
C OM
(
OFF
)
V+ = +3.3V, V
COM
= +0.3V, +3V
V
NO_
= +3V, +0.3V
T
MIN
to T
MAX
-5
5
nA
DYNAMIC
+25°C2060
Address Transition Time t
TRANS
V
N O_
= +1.5V, R
L
= 300Ω,
C
L
= 35pF, Figure 2
T
MIN
to T
MAX
70
ns
+25°C2560
Inhibit Turn-On Time t
ON
V
N O
_ = +1.5V, R
L
= 300Ω,
C
L
= 35pF, Figure 3
T
MIN
to T
MAX
70
ns
+25°C1020
Inhibit Turn-Off Time t
OFF
V
N O
_ = +1.5V, R
L
= 300Ω,
C
L
= 35pF, Figure 3
T
MIN
to T
MAX
30
ns
+25°C20
Break-Before-Make Time
(Note 7)
t
BBM
V
N O
_ = +1.5V, R
L
= 300Ω,
C
L
= 35pF, Figure 4
T
MIN
to T
MAX
2
ns
Charge Injection Q
V
GEN
= 0, R
GEN
= 0, C
L
= 1.0nF,
Figure 5
2pC