Datasheet

MAX4695
Low-Voltage, 60Ω Dual
SPDT Analog Switch in Thin QFN
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS—Single +3V Supply
(V+ = +2.7V to +3.3V, V
IH
= +1.4V, V
IL
= +0.5V, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V+ = +3V and
T
A
= +25°C.) (Notes 2, 9)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Signals on IN_, COM_, NO_, and NC_ exceeding V+ or GND are clamped by internal diodes. Limit forward-diode current to
maximum current rating.
(Voltages Referenced to GND)
V+ ............................................................................-0.3V to +6V
All Other Pins (Note 1) .............................. -0.3V to (V+ + 0.3V)
Continuous Current COM_, NO_, NC_ .............................±20mA
Peak Current COM_, NO_, NC_
(pulsed at 1ms, 10% duty cycle) ...............................±40mA
ESD per Method 3015.7 .........................................................2kV
Continuous Power Dissipation (T
A
= +70°C)
10-Pin µMAX (derate 4.7mW/°C above +70°C) ......... 330mW
12-Pin Thin QFN (derate 16.7mW/°C above +70°C) 1333.3mW
Operating Temperature Range .......................... -40°C to +85°C
Storage Temperature Range ........................... -65°C to +150°C
Lead Temperature (soldering, 10s) ............................... +300°C
PARAMETER SYMBOL CONDITIONS T
A
MIN TYP MAX UNITS
ANALOG SWITCH
Analog Signal Range
V
COM_
,
V
NO_
, V
NC_
_
0V+V
+25°C4060
On-Resistance R
ON
V+ = +2.7V, I
COM_
= 1mA, V
NO_
or
V
NC_
= +1.4V
T
MIN
to T
MAX
70
Ω
+25°C 0.5 3
On-Resistance Match
Between Channels (Note 3)
∆R
ON
V+ = +2.7V, I
COM_
= 1mA, V
NO_
or
V
NC_
= +1.4V
T
MIN
to T
MAX
4
Ω
+25°C610
On-Resistance Flatness
(Note 4)
R
FLAT
(
ON
)
V+ = +2.7V, I
COM_
= 1mA, V
NO_
or
V
NC_
= +1V, +1.4V, +1.8V
T
MIN
to T
MAX
15
Ω
+25°C -0.1 ±0.01 +0.1
NO_, NC_ Off-Leakage
Current (Note 5)
I
N O_ ( OFF )
,
I
N C _
(
OFF
)
V+ = +3.3V, V
COM_
= +0.3V, +3V
V
NO_
or V
NC_
= +3V, +0.3V
T
MIN
to T
MAX
-1 +1
nA
+25°C -0.2 ±0.01 +0.2
COM_ On-Leakage Current
(Note 5)
I
C OM _
(
ON
)
V + = + 3.3V , V
C OM_
= + 0.3V , +3V
V
N O_
or V
N C _
= + 0.3V , +3V , or fl oati ng
T
MIN
to T
MAX
-2 +2
nA
DYNAMIC
+25°C2430
Turn-On Time t
ON
V
N O
or V
N C _
= +1.5V, R
L
= 300Ω,
C
L
= 35pF, Figure 2
T
MIN
to T
MAX
40
ns
+25°C1218
Turn-Off Time t
OFF
V
N O
or V
N C _
= +1.5V, R
L
= 300Ω,
C
L
= 35pF, Figure 2
T
MIN
to T
MAX
20
ns
+25°C12
Break-Before-Make Time
(Note 6)
t
BBM
V
N O
or V
N C _
= +1.5V, R
L
= 300Ω,
C
L
= 35pF, Figure 3
T
MIN
to T
MAX
2
ns
Charge Injection Q
V
GEN
= 0, R
GEN
= 0, C
L
= 1.0nF,
Figure 4
4pC
On-Channel -3dB Bandwidth BW
Signal = 0dBm, 50Ω in and out,
Figure 5
300 MHz
Off-Isolation (Note 7) V
ISO
f = 1MHz, R
L
= 50Ω, C
L
= 5pF,
Figure 5
-75 dB