Datasheet

MAX4655–MAX4658
High-Current, 10 Ω , SPST, CMOS
Analog Switches
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS—Dual Supplies (continued)
(V+ = +15V, V- = -15V, V
IH
= 2.4V, V
IL
= 0.8V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at T
A
= +25°C.)
(Notes 2, 7, 8)
PARAMETER
SYMBOL
CONDITIONS
T
A
MIN
TYP
MAX
UNITS
Charge Injection Q
V
GEN
= 0; R
GEN
= 0;
C
L
= 1nF; Figure 4
+25°C 23 pC
-3dB Bandwidth BW +25°C 210 MHz
Off-Isolation (Note 5) V
ISO
f = 1MHz; R
L
= 50Ω;
Figure 5
+25°C -77
dB
Total Harmonic Distortion THD
f = 20H z to 20kH z,
V
N_
= 5V
p-p
; R
L
= 600Ω
+25°C 0.007 %
NO
or NC Off-Capacitance
C
NO
(
OFF
)
,
C
NC
(
OFF
)
f = 1MHz; Figure 6 +25°C 25 pF
COM Off-Capacitance
C
COM
(
OFF
)
f = 1MHz; Figure 6 +25°C 25 pF
COM On-Capacitance
C
COM
(
ON
)
f = 1MHz; Figure 7 +25°C 67 pF
DIGITAL I/O
Input Logic High V
IH
T
MIN
to T
MAX
2.4 V
Input Logic Low V
IL
T
MIN
to T
MAX
0.8 V
Input Leakage Current I
IN
V
IN
= 0.8V or 2.4V
T
MIN
to T
MAX
-1 +1 µA
POWER SUPPLY
Power-Supply Range
T
MIN
to T
MAX
±4.5 ±20 V
+25°C 90 150
Positive Supply Current I+
V
IN
= 0 or 5V, V
N_
= 3V;
I
SWITCH
= 200mA,
MAX4655/4656;
I
SWITCH
= 100mA,
MAX4657/4658
T
MIN
to T
MAX
300
µA
+25°C 10 50
Negative Supply Current I-
V
IN
= 0 or 5V, V
N_
= 3V;
I
SWITCH
= 200mA,
MAX4655/4656;
I
SWITCH
= 100mA,
MAX4657/4658
T
MIN
to T
MAX
100
µA
+25°C 80 130
Ground Current I
GND
V
IN
= 0 or 5V, V
N_
= 3V;
I
SWITCH
= 200mA,
MAX4655/4656;
I
SWITCH
= 100mA,
MAX4657/4658
T
MIN
to T
MAX
260
µA