Datasheet
MAX4620/MAX4630/MAX4640
±15kV ESD-Protected, Low-Voltage, Quad,
SPST, CMOS Analog Switches
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS—SINGLE +5V SUPPLY (continued)
(V+ = +4.5V to +5.5V, V
IH
= 2.4V, V
IL
= 0.8V, T
A
= T
MIN
to T
MAX,
unless otherwise specified. Typical values are at V+ = +5V,
T
A
= +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
ANALOG SWITCH
T
A
= +25°C -0.5 0.01 0.5
COM_ Off-Leakage Current
(Note 5)
I
COM_
(
OFF
)
V+ = 5.5V;
V
COM_
= 1V, 4.5V;
V
NO_
or
V
NC_
= 4.5V, 1V
T
A
= T
MIN
to T
MAX
-5 5
nA
T
A
= +25°C -1 0.02 1
COM_ On-Leakage Current
(Note 5)
I
COM_
(
ON
)
V+ = 5.5V;
V
COM_
= 1V, 4.5V;
V
NO_
or V
NC_
= 1V,
4.5V, or floating
T
A
= T
MIN
to T
MAX
-10 10
nA
LOGIC INPUT
IN_ Input High V
IH
2.4 V
IN_ Input Low V
IL
0.8 V
Logic Input Leakage Current I
IN
V
IN
= 0 or V+ -1 1 µA
SWITCH DYNAMIC CHARACTERISTICS
T
A
= +25°C 90 150
Turn-On Time t
ON
V
COM
_
= 3V,
R
L
= 300Ω,
C
L
= 35pF,
Figure 1
T
A
= T
MIN
to T
MAX
180
ns
T
A
= +25°C5080
Turn-Off Time t
OFF
V
COM
_
= 3V,
C
L
= 35pF,
R
L
= 300Ω,
Figure 1
T
A
= T
MIN
to T
MAX
100
ns
T
A
= +25°C545
Break-Before-Make
(MAX4640 only)
V
COM
_
= 3V,
R
L
= 300Ω,
C
L
= 35pF
T
A
= T
MIN
to T
MAX
4
ns
On-Channel Bandwidth -3dB BW
Signal = 0dBm, R
IN
= R
OUT
= 50Ω,
C
L
= 5pF, Figure 2
300 MHz
Charge Injection Q V
GEN
= 2V, C
L
= 1.0nF, R
GEN
= 0, Figure 4 5 pC
NO_ or NC_ On-Capacitance C
OFF
V
NO_
= V
NC_
= GND, f = 1MHz, Figure 3 20 pF
COM_ Off-Capacitance C
COM_
(
OFF
)
V
COM_
= GND, f = 1MHz, Figure 3 12 pF
COM_ On-Capacitance C
COM_
(
ON
)
V
COM_
= V
NO_
, V
NC_
= GND, f = 1MHz,
Figure 3
20 pF
R
L
= 50Ω, C
L
= 5pF, f = 1MHz, Figure 2 -75
Off-Isolation (Note 6) V
ISO
R
L
= 50Ω, C
L
= 5pF, f = 10MHz, Figure 2 -45
dB