Datasheet

MAX4575/MAX4576/MAX4577
±15kV ESD-Protected, Low-Voltage, Dual, SPST,
CMOS Analog Switches
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS—SINGLE +5V SUPPLY (continued)
(V+ = +4.5V to +5.5V, V
IH
= 2.4V, V
IL
= 0.8V, T
A
= T
MIN
to T
MAX
, unless otherwise specified. Typical values are at V+ = +5V,
T
A
= +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
LOGIC INPUT
IN_ Input High V
IH
2.4 V
IN_ Input Low V
IL
0.8 V
Logic Input Leakage I
IN
V
IN
= 0 or V+ -1 1 µA
SWITCH DYNAMIC
T
A
= +25°C 90 150
Turn-On Time
t
ON
V
COM
_ = 3V,
R
L
= 300Ω, C
L
= 35pF,
Figure 1
T
A
= T
M IN
to T
M AX
180
ns
T
A
= +25°C5080
Turn-Off Time
t
OFF
V
COM
_ = 3V,
R
L
= 300Ω, C
L
= 35pF,
Figure 1
T
A
= T
M IN
to T
M AX
100
ns
T
A
= +25°C545
Break-Before-Make
(MAX4577 only)
V
COM
_ = 3V,
R
L
= 300Ω, C
L
= 35pF
T
A
= T
M IN
to T
M AX
4
ns
On-Channel Bandwidth -3dB BW
S i g nal = 0d Bm , R
I N
= R
OU T
= 50Ω , C
L
= 5p F,
Fi g ur e 2
300 MHz
Charge Injection Q V
GE N
= 2V , C
L
= 1.0nF, R
GE N
= 0, Fi g ur e 3 4 pC
NO_ or NC_ Off-Capacitance C
OFF
V
NO
_ = V
NC
_ = GND, f = 1MHz,
Figure 4
20 pF
COM_ Off-Capacitance C
C OM
(
OFF
)
V
C OM
_ = GND, f = 1MHz, Figure 4 12 pF
COM_ On-Capacitance C
C OM
(
ON
)
V
C OM
_ = V
NO
_, V
NC
_ = GND, f = 1MHz,
20 pF
R
L
= 5 0Ω , C
L
= 5 p F , f = 1M H z , Fi g ur e 2 -75
Off-Isolation (Note 7) V
ISO
R
L
= 5 0Ω , C
L
= 5 p F , f = 10 M H z, Fi g u r e 2 -45
dB
R
L
= 5 0Ω , C
L
= 5 p F , f = 1M H z , Fi g ur e 6 -90
Crosstalk (Note 8) V
CT
R
L
= 5 0Ω , C
L
= 5 p F , f = 10 M H z, Fi g u r e 6 -70
dB
Total Harmonic Distortion THD R
L
= 6 00 Ω , f = 2 0H z to 20 kH z 0.015 %
ESD SCR Holding Current I
H
110 mA
ESD SCR Holding Voltage V
H
3V
POWER SUPPLY
Power-Supply Range V+ 2 12 V
T
A
= +25°C1
Positive Supply Current I+
V+ = 5.5V,
V
IN
= 0 or V+
T
A
= T
M IN
to T
M AX
10
µA