Datasheet

2 ______________________________________________________________________________________
MAX3946
1Gbps to 11.3Gbps, SFP+ Laser Driver
with Laser Impedance Mismatch Tolerance
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
V
CC
, V
CCT
, V
CCD
................................................-0.3V to +4.0V
Current Into TOUT+ and TOUT- .................................... +100mA
Current Into TIN+ and TIN- ............................. -20mA to +20mA
Voltage Range at TIN+, TIN-,
DISABLE, SDA, SCL, CSEL, FAULT,
BMAX, and BMON ................................ -0.3V to (V
CC
+ 0.3V)
Voltage Range at BIAS ........................................................-0.3V to V
CC
Voltage Range at TOUT+ and TOUT- ....(V
CC
- 1.3V) to (V
CC
+ 1.3V)
Current into BIAS .........................................................................+130mA
Continuous Power Dissipation (T
A
= +70NC)
TQFN (derate 27.8mW/NC above +70NC)..................2222mW
Storage Temperature Range .......................... -55NC to +150NC
Die Attach Temperature .................................................+400NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
ELECTRICAL CHARACTERISTICS
(V
CC
= +2.85V to +3.63V, T
A
= -40°C to +85°C, and Figure 1. Guaranteed by design and characterization from T
A
= -40°C to +95°C.
Typical values are at V
CC
= +3.3V, I
BIAS
= 60mA, I
MOD
= 40mA, 25I differential output load, and T
A
= +25°C, unless otherwise
noted.) (Note 2)
ABSOLUTE MAXIMUM RATINGS
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TQFN
Junction-to-Ambient Thermal Resistance (q
JA
) ..........36°C/W
Junction-to-Case Thermal Resistance (q
JC
) .................3°C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
POWER SUPPLY
Power-Supply Current I
CC
Excludes output current through the exter-
nal pullup inductors (Note 3)
68 90 mA
Power-Supply Voltage V
CC
2.85 3.63 V
Power-Supply Noise
DC to 10MHz 100
mV
P-P
10MHz to 20MHz 10
POWER-ON RESET
V
CC
for Enable High 2.55 2.75 V
V
CC
for Enable Low 2.3 2.45 V
DATA INPUT SPECIFICATION
Input Data Rate 1 10 11.3 Gbps
Differential Input Voltage V
IN
TXEQ_EN = high, launch amplitude into
FR4 transmission line P 5.5in
0.19 0.7
V
P-P
TXEQ_EN = low 0.15 1.0
Differential Input Resistance R
IN
75 100 125
I
Differential Input Return Loss SDD11
Part powered on, f P 10GHz
12 dB
Common-Mode Input Return
Loss
SCC11
Part powered on, 1GHz P f P 10GHz
10 dB
BIAS GENERATOR
Maximum Bias Current I
BIASMAX
Current into BIAS pin, DISABLE = low, and
TX_EN = high
80 mA