Datasheet
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MAX31826
1-Wire Digital Temperature Sensor
with 1Kb Lockable EEPROM
Note 1: Limits are 100% production tested at T
A
= +25°C and/or T
A
= +85°C. Limits over the operating temperature range and
relevant supply voltage range are guaranteed by design and characterization. Typical values are not guaranteed.
Note 2: All voltages are referenced to ground.
Note 3: The pullup supply voltage specification assumes that the pullup device is ideal, and therefore the high level of the pullup
is equal to V
PU
. To meet the device’s V
IH
specification, the actual supply rail for the strong pullup transistor must include
margin for the voltage drop across the transistor when it is turned on; thus: V
PU_ACTUAL
= V
PU_IDEAL
+ V
TRANSISTOR
.
Note 4: Guaranteed by design. These limits represent a three sigma distribution.
Note 5: To guarantee a presence pulse under low-voltage parasite-power conditions, V
ILMAX
might need to be reduced to as low
as 0.5V.
Note 6: Logic-high voltages are specified at a 1mA source current.
Note 7: Standby current specified up to T
A
= +70NC. Standby current typically is 3FA at T
A
= +125NC.
Note 8: To minimize I
DDS
, DQ should be within the following ranges: V
GND
P V
DQ
P V
GND
+ 0.3V or V
DD
- 0.3V P V
DQ
P V
DD
.
Note 9: Active current refers to supply current during active temperature conversions or EEPROM writes.
Note 10: DQ line is high (high-impedance state).
Note 11: See the 1-Wire Timing Diagrams.
Note 12: Under parasite power, if t
RSTL
> 960Fs, a power-on reset (POR) can occur.
AC ELECTRICAL CHARACTERISTICS
(V
DD
= 3.0V to 3.7V, T
A
= -55°C to +125°C, unless otherwise noted.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Temperature Conversion Time t
CONV
12-bit resolution 150 ms
Time to Strong Pullup On t
SPON
Start Convert T command, or Copy
Scratchpad 2 command issued
10
Fs
Time Slot t
SLOT
(Note 11) 60 120
Fs
Recovery Time t
REC
(Note 11) 1
Fs
Write-Zero Low Time t
LOW0
(Note 11) 60 120
Fs
Write-One Low Time t
LOW1
(Note 11) 1 15
Fs
Read Data Valid t
RDV
(Note 11) 15
Fs
Reset Time High t
RSTH
(Note 11) 480
Fs
Reset Time Low t
RSTL
(Notes 11, 12) 480
Fs
Presence-Detect High t
PDHIGH
(Note 11) 15 60
Fs
Presence-Detect Low t
PDLOW
(Note 11) 60 240
Fs
DQ Capacitance C
IN/OUT
25 pF
AD0–AD3 Capacitance C
IN_AD
50 pF
NONVOLATILE MEMORY
EEPROM Write/Erase Cycles N
EEWR
At T
A
= +25°C
200k
At T
A
= +85°C (worst case)
50k
EEPROM Data Retention t
EEDR
At T
A
= +85°C (worst case)
40 Years
EEPROM Write Time t
WR
20 25 ms