Datasheet

MAX19996A
SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer
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2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19996A toc100
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
26802240 24602020
-30
-40
-20
-10
-50
1800 2900
T
C
= +25°C
T
C
= +85°C
T
C
= -30°C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19996A toc101
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
26802240 24602020
-30
-40
-20
-10
-50
1800 2900
P
LO
= -3dBm, 0dBm, +3dBm
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19996A toc102
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
26802240 24602020
-30
-40
-20
-10
-50
1800 2900
V
CC
= 4.75V
V
CC
= 5.0V
V
CC
= 5.25V
RF PORT RETURN LOSS
vs. RF FREQUENCY
MAX19996A toc103
RF FREQUENCY (MHz)
RF PORT RETURN LOSS (dB)
28002400 26002200
20
30
10
0
40
2000 3000
P
LO
= -3dBm, 0dBm, +3dBm
IF PORT RETURN LOSS
vs. IF FREQUENCY
MAX19996A toc104
IF FREQUENCY (MHz)
IF PORT RETURN LOSS (dB)
410230 320140
20
30
40
10
0
50
50 500
f
LO
= 2300MHz
L1, L2 = 390nH
L1, L2 = 470nH
L1, L2 = 120nH
L1, L2 = 270nH
V
CC
= 4.75V, 5.0V, 5.25V
LO PORT RETURN LOSS
vs. LO FREQUENCY
MAX19996A toc105
LO FREQUENCY (MHz)
LO PORT RETURN LOSS (dB)
2900 34502350
20
30
10
0
40
1800 4000
P
LO
= -3dBm
P
LO
= +3dBm
P
LO
= 0dBm
SUPPLY CURRENT
vs. TEMPERATURE (T
C
)
MAX19996A toc106
TEMPERATURE (°C)
SUPPLY CURRENT (mA)
25 55-5
220
230
210
240
250
200
-35 85
V
CC
= 5.25V
V
CC
= 5.0V
V
CC
= 4.75V
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19996A toc107
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
2100 2300 25001900
-20
-30
-10
0
-40
1700 2700
L3 = 0Ω
L3 = 4.7nH
RF-TO-IF ISOLATION
vs. RF FREQUENCY
MAX19996A toc108
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
2400 2600 28002200
40
50
30
60
20
2000 3000
L3 = 0Ω
L3 = 4.7nH
Typical Operating Characteristics (continued)
( Typical Application Circuit with tuning elements outlined in Table 1, V
CC
= 5.0V, f
RF
= 2000MHz to 3000MHz, LO is low-side
injected for a 300MHz IF, P
RF
= -5dBm, P
LO
= 0dBm, T
C
= +25°C, unless otherwise noted.)