Datasheet
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
_______________________________________________________________________________________ 5
3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
, R1 = R4 = 909Ω, R2 = R5 = 1kΩ. Typical values are at V
CC
= 3.3V, P
RF
= -5dBm, P
LO
= 0dBm,
f
RF
= 1850MHz, f
LO
= 2200MHz, f
IF
= 350MHz, T
C
= +25°C, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Conversion Gain G
C
(Note 8) 8.4 dB
Flatness over any one of three frequency
bands:
f
RF
= 1710MHz to 1785MHz
+0.07
f
RF
= 1850MHz to 1910MHz -0.03
Conversion Gain Flatness ΔG
C
f
RF
= 1920MHz to 1980MHz -0.13
dB
Gain Variation Over Temperature TC
CG
T
C
= -40°C to +85°C -0.013 dB/°C
Input Compression Point IP
1dB
(Note 9) 10.2 dBm
Input Third-Order Intercept Point IIP3 f
RF1
- f
RF2
= 1MHz 22.5 dBm
Input Third-Order Intercept Point
Variation Over Temperature
TC
IIP3
f
RF1
- f
RF2
= 1MHz, P
RF
= -5dBm per tone,
T
C
= -40°C to +85°C
0.0017 dBm/°C
Noise Figure NF
SSB
Single sideband, no blockers present 9 dB
Noise Figure Temperature
Coefficient
TC
NF
Single sideband, no blockers present,
T
C
= -40°C to +85°C
0.016 dB/°C
P
RF
= -10dBm 65
2LO-2RF Spur Rejection 2 x 2
P
RF
= -5dBm 60
dBc
P
RF
= -10dBm 77
3LO-3RF Spur Rejection 3 x 3
P
RF
= -5dBm 67
dBc
RF Input Return Loss
LO and IF terminated into matched
impedance, LO on
25 dB
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50Ω
40 48
Channel Isolation (Note 7)
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50Ω
40 48
dB
LO-to-LO Isolation
P
LO1
= +3dBm, P
LO2
= +3dBm,
f
LO1
= 2200MHz, f
LO2
= 2201MHz (Note 7)
40 48 dB
LO Switching Time
50% of LOSEL to IF settled within
2 degrees
50 ns
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(
Typical Application Circuit
, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, V
CC
= 4.75V to 5.25V, RF and LO ports are driven from 50Ω sources,
P
LO
= -3dBm to +3dBm, P
RF
= -5dBm, f
RF
= 1700MHz to 2000MHz, f
LO
= 2050MHz to 2350MHz, f
IF
= 350MHz, f
RF
< f
LO
, T
C
= -40°C
to +85°C. Typical values are at V
CC
= 5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 1850MHz, f
LO
= 2200MHz, f
IF
= 350MHz, T
C
= +25°C.
All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)