Datasheet

MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
4 _______________________________________________________________________________________
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
P
RF
= -10dBm -63 -76
2LO-2RF Spur Rejection 2 x 2
f
RF
= 800MHz,
f
LO
= 1000MHz,
f
SPUR
= 900MHz
P
RF
= -5dBm
(Note 9)
-58 -71
dBc
P
RF
= -10dBm -65 -78
3LO-3RF Spur Rejection 3 x 3
f
RF
= 800MHz,
f
LO
= 1000MHz,
f
SPUR
= 933.3MHz
P
RF
= -5dBm
(Note 9)
-60 -73
dBc
LO Leakage at RF Port
f
LO
= 900MHz to 1300MHz, P
LO
= +3dBm
(Note 10)
-40 -20
dBm
f
LO
= 900MHz to 1200MHz, P
LO
= +3dBm
(Note 10)
-38 -25
2LO Leakage at RF Port
f
L O
= 1200M H z to 1300M H z, P
L O
= + 3d Bm
(Note 10)
-35 -22
dBm
3LO Leakage at RF Port
f
LO
= 900MHz to 1300MHz, P
LO
= +3dBm
(Note 10)
-50 -28
dBm
4LO Leakage at RF Port
f
LO
= 900MHz to 1300MHz, P
LO
= +3dBm
(Note 9)
-25 -15
dBm
LO Leakage at IF Port
f
LO
= 900MHz to 1300MHz, P
LO
= +3dBm
(Note 10)
-35 -23
dBm
RF-to-IF Isolation f
RF
= 824MHz to 915MHz (Note 10) 30 38 dB
LO-to-LO Isolation
P
LO1
= +3dBm, P
LO2
= +3dBm,
f
LO1
= 900MHz, f
LO2
= 901MHz,
P
RF
= -5dBm (Notes 8, 10)
40 46 dB
Channel-to-Channel Isolation
RFM AIN ( RFD IV ) conver ted p ow er m easur ed
at IFD IV ( IFM AIN ) , r el ati ve to IFM AIN ( IFD IV ) ,
al l unused p or ts ter m i nated to 50Ω ( N ote 9)
40 48 dB
LO Switching Time 50% of LOS E L to IF settl ed w i thi n 2 d eg r ees 50
1000
ns
RF Input Impedance Z
RF
50 Ω
RF Input Return Loss
LO on and IF terminated into matched
impedance
20 dB
LO Input Impedance Z
LO
50 Ω
RF and IF terminated into matched
impedance, LO port selected
20
LO Input Return Loss
RF and IF terminated into matched
impedance, LO port unselected
20
dB
IF Terminal Output Impedance Z
IF
Nominal differential impedance at the IC’s
IF output
200
Ω
IF Return Loss
RF terminated in 50Ω; transformed to 50Ω
using external components shown in the
Typical Application Circuit
18 dB
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
( Typical Application Circuit , V
CC
= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, P
LO
= -3dBm to +3dBm,
P
RF
= -5dBm, f
RF
= 700MHz to 1000MHz, f
LO
= 900MHz to 1200MHz, f
IF
= 200MHz, f
RF
< f
LO
, T
C
= -40°C to +85°C. Typical values
are at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
=900MHz, f
LO
= 1100MHz, f
IF
= 200MHz, T
C
=+25°C, all parameters are guaran-
teed by design and characterization, unless otherwise noted.) (Note 6)