Datasheet
3LO-3RF RESPONSE vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
MAX19985A toc45
RF FREQUENCY (MHz)
3LO-3RF RESPONSE (dBc)
900800
60
65
55
75
50
70
80
85
45
700 1000
SEE TABLE 1 FOR RESISTOR AND I
CC
VALUES
1, 2, 3, 4
P
RF
= -5dBm
5
7
6
2LO-2RF RESPONSE vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
MAX19985A toc44
RF FREQUENCY (MHz)
2LO-2RF RESPONSE (dBc)
900800
60
65
55
70
75
80
50
700
1000
SEE TABLE 1 FOR RESISTOR AND I
CC
VALUES
2, 3, 4
1
P
RF
= -5dBm
5
7
6
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
MAX19985A toc39
LO FREQUENCY (MHz)
LO SELECTED RETURN LOSS (dB)
11001000850
40
30
20
10
0
50
700 1300
P
LO
= +3dBm
P
LO
= 0dBm
P
LO
= -3dBm
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________ 11
RF PORT RETURN LOSS
vs. RF FREQUENCY
MAX19985A toc37
RF FREQUENCY (MHz)
RF PORT RETURN LOSS (dB)
900 950800750 850
25
20
15
10
5
0
30
700 1000
P
LO
= -3dBm, 0dBm, +3dBm
IF = 200MHz
IF PORT RETURN LOSS
vs. IF FREQUENCY
MAX19985A toc38
IF FREQUENCY (MHz)
IF PORT RETURN LOSS (dB)
140 230 320 410
25
20
15
10
5
0
30
50 500
LO = 900MHz
V
CC
= 4.75V, 5.0V, 5.25V
IF RETURN LOSS DEPENDS ON
EXTERNAL IF COMPONENTS
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCY
MAX19985A toc40
LO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS (dB)
11001000850
40
30
20
10
0
50
700 1300
P
LO
= -3dBm, 0dBm, +3dBm
SUPPLY CURRENT
vs. TEMPERATURE (T
C
)
MAX19985A toc41
TEMPERATURE (°C)
SUPPLY CURRENT (mA)
-15 25 45565
290
310
330
350
370
270
-35 85
V
CC
= 5.25V
V
CC
= 4.75V
V
CC
= 5.0V
CONVERSION GAIN vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
MAX19985A toc42
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
900800
7
8
9
10
11
6
700
1000
SEE TABLE 1 FOR RESISTOR AND I
CC
VALUES
1, 2, 3, 4
7
5
6
INPUT IP3 vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
MAX19985A toc43
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
900800
20
22
16
18
24
26
28
14
700 1000
SEE TABLE 1 FOR RESISTOR AND I
CC
VALUES
2, 3, 4
11
4
5
7
6
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, V
CC
= +5.0V, P
LO
= 0dBm, P
RF
= -5dBm, LO is high-side injected for a 200MHz IF, T
C
=+25°C, unless
otherwise noted.)